Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling (SOC) and the existence of spin-textured surface states that might be potentially exploited for "topological spintronics." Here, we use spin pumping and the inverse spin Hall effect to demonstrate successful spin injection at room temperature from a metallic ferromagnet (CoFeB) into the prototypical 3D topological insulator Bi2Se3. The spin pumping process, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) line width. Theoretical modeling of spin pumping through the surface of Bi2Se3, as well as of the measured angular dependence of spin-charge conversion signal, suggests that pumped spin current is first greatly enhanced by the surface SOC and then converted into a dc-voltage signal primarily by the inverse spin Hall effect due to SOC of the bulk of Bi2Se3. We find that the FMR line width broadens significantly (more than a factor of 5) and we deduce a spin Hall angle as large as 0.43 in the Bi2Se3 layer.

The spin-orbit torque (SOT) that arises from materials with large spin-orbit coupling promises a path for ultralow power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BiSe thin films in BiSe/CoFeB heterostructures by using d.c. planar Hall and spin-torque ferromagnetic resonance (ST-FMR) methods. Remarkably, the spin torque efficiency (θ) was determined to be as large as 18.62 ± 0.13 and 8.67 ± 1.08 using the d.c. planar Hall and ST-FMR methods, respectively. Moreover, switching of the perpendicular CoFeB multilayers using the SOT from the BiSe was observed at room temperature with a low critical magnetization switching current density of 4.3 × 10 A cm. Quantum transport simulations using a realistic sp tight-binding model suggests that the high SOT in sputtered BiSe is due to the quantum confinement effect with a charge-to-spin conversion efficiency that enhances with reduced size and dimensionality. The demonstrated θ, ease of growth of the films on a silicon substrate and successful growth and switching of perpendicular CoFeB multilayers on BiSe films provide an avenue for the use of BiSe as a spin density generator in SOT-based memory and logic devices.

Magnetization switching by the interaction between spins and charges has greatly brightened the future of spintronic memories. [1][2][3][4][5][6] This has been evident in the rapid development of spin transfer torque-magnetic random-access memory (STT-MRAM) as a mainstream non-volatile memory technology, in which a spin-polarized current is injected into magnetic tunnel junctions (MTJs) for cell programming. 7-18 However, as cell areas scale down to meet density and power demands, conventional STT-MRAM suffers from serious endurance and reliability issues due to the aging of the ultrathin MgO barrier and read disturbance. The challenge of lowering STT switching current densities to further reduce power consumption is still yet to be met. [19][20][21] The discovery of spin-orbit torque (SOT) switching in heavy metal/ferromagnetic metal/oxide heterostructures by applying an in-plane charge current to three-terminal devices provides a promising alternative mechanism. 22-28 It shows the potential to enhance the endurance and reliability of MRAM, while improving speed and reducing power consumption. [29][30][31][32] Thus, considerable research has been triggered to further elucidate the mechanism of SOT switching, which is currently described as magnetic reversal via two vector components, the damping-like (DL) and field-like (FL) torques. 33,34 Since the demonstration of perpendicular-anisotropy MgO/CoFeB MTJs (p-MTJs), the switching of perpendicular magnetization by SOT has become of particular interest. [33][34][35][36][37][38] However, an external magnetic field collinear with the charge current is required to execute deterministic switching of p-MTJs. This intrinsic constraint, combined with the three-terminal device configuration, is limiting the practical application of SOT-MRAM. [26][27][28]35 Great efforts have been made to eliminate the need

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Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices. *Corresponding author. Tel: (612) 625-9509. E-mail: jpwang@umn.edu 2 Information storage technology is constantly challenged by an increasing demand for storage units that are small, retain information for the longest time, and dissipate miniscule amount of energy to store (write) and retrieve (read) information. Magnetic random access memory (MRAM) meets these requirements to a large extent and has been proposed as a universal storage device for computer memory. [1][2][3] In MRAM technology, magnetic tunneling junctions (MTJ) comprise the main storage cells. Low-energy writing of bits requires an electrically tunable mechanism to reorient the magnetization of the MTJ. However, the widely studied switching mechanisms based on utilizing current induced spin-transfer-torques (STT) 4,5 or spin-orbit-torques (SOT) 6-8 incur high energy dissipation because of the relatively large writing current density. 9,10In recent years, several mechanisms based on using voltage to control magnetization have emerged as promising routes for ultra-low power writing of data. 11-15 Among these approaches, the strain induced control of the magnetic anisotropy in multiferroic heterostructures (a magnetostrictive layer elastically coupled with an underlying piezoelectric layer) stands out as a remarkably energyefficient switching mechanism. 16-21It has been widely investigated in various piezoelectric/ferromagnetic bilayer thin films [22][23][24][25][26] or nano-structures. [27][28][29][30] There are also several theoretical predications 31-33 that such a method will dissipate only a few atto-Joules (aJ) of energy to write data. This establishes the promise of using strain to control the resistance of an MTJ for ultra-energy-efficient memory applications.The key for strain control of the in-plane magnetization is that the in-plane strain should be anisotropic. In most of the previous reports, [24][25][26][27]34 single crystalline piezoelectric substrates Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT...