Atomically thin two-dimensional (2D) materials are promising candidates for sub-10 nm transistor channels due to their ultrathin body thickness, which results in strong electrostatic gate control. Properly scaling a transistor technology requires reducing both the channel length (distance from source to drain) and the contact length (distance that source and drain interface with semiconducting channel). Contact length scaling remains an unresolved epidemic for transistor scaling, affecting devices from all semiconductorssilicon to 2D materials. Here, we show that clean edge contacts to 2D MoS 2 provide immunity to the contact-scaling problem, with performance that is independent of contact

There is a rising interest in employing the negative capacitance (NC) effect to achieve sub-60 mV/ decade (below the thermal limit) switching in field-effect transistors (FETs). The NC effect, which is an effectual amplification of the applied gate potential, is realized by incorporating a ferroelectric material in series with a dielectric in the gate stack of a FET. One of the leading challenges to such NC-FETs is the variable substrate capacitance exhibited in 3D semiconductor channels (bulk, Fin, or nanowire) that minimizes the extent of sub-60 mV/decade switching. In this work, we demonstrate 2D NC-FETs that combine the NC effect with 2D MoS 2 channels to extend the steep switching behavior. Using the ferroelectric polymer, poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE)), these 2D NC-FETs are fabricated by modification of top-gated 2D FETs through the integrated addition of P(VDF-TrFE) into the gate stack. The impact of including an interfacial metal between the ferroelectric and dielectric is studied and shown to be critical. These 2D NC-FETs exhibit a decrease in subthreshold swing from 113 mV/decade down to 11.7 mV/decade at room temperature with sub-60 mV/decade switching occurring over more than 4 decades of current. The P(VDF-TrFE) proves to be an unstable option for a device technology, yet the superb switching behavior observed herein opens the way for further exploration of nanomaterials for extremely lowvoltage NC-FETs. Published by AIP Publishing. [http://dx.

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By introducing chiral leucine pendants to silole scaffold, leucine-containing silole (Silole-Leu) is synthesized and it is endowed with not only aggregation-induced emission and circular dichroism, but excellent chiral polarized luminescence as well. Silole-Leu also has the capacity to self-assemble into nano/micro helical luminescent fibers and the dimension of the fibers can be tuned by adjusting the ratio and volume of mixed solvents for evaporation as revealed by atomic force microscope, scanning electron microscope, and fluorescence microscope. The characteristic helicity of microfibers is directly visualized for the first time by using fluorescence microscope.