Immunity to Contact Scaling in MoS<sub>2</sub> Transistors Using in Situ Edge Contacts

Cheng, Zhihui; Price, Katherine; Singh, Shreya; Noyce, Steven; Lin, Yu-De; Yu, Yifei; Cao, Linyou; Franklin, Aaron D.

doi:10.1021/acs.nanolett.9b01355

Cited by 100 publications

(106 citation statements)

References 60 publications

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“…Clearly, there is a tradeoff between damaging the MoS 2 to increase carrier injection and the resultant degradation in lateral carrier transport from contact to channel. Though higher energy ion beams show little promise for improving the metal-MoS 2 interface, we can utilize their etching capability to create edge contacts to thin layers (1-2L) of 2D materials [55]. Other applications such as sensing, intercalation and physical modification of 2D materials can also benefit from these findings.…”

Section: Modification Of Metal-2d Materials Interfacementioning

confidence: 99%

Convergent ion beam alteration of 2D materials and metal-2D interfaces

Cheng

Abuzaid

et al. 2019

2D Mater.

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Tailoring the properties of two-dimensional (2D) crystals is important for both understanding the material behavior and exploring new functionality. Here we demonstrate the alteration of MoS 2 and metal-MoS 2 interfaces using a convergent ion beam. Different beam energies, from 60 eV to 600 eV, are shown to have distinct effects on the optical and electrical properties of MoS 2. Defects and deformations created across different layers were investigated, revealing an unanticipated improvement in the Raman peak intensity of multilayer MoS 2 when exposed to a 60 eV Ar + ion beam, and attenuation of the MoS 2 Raman peaks with a 200 eV ion beam. Using cross-sectional scanning transmission electron microscopy (STEM), alteration of the crystal structure after a 600 eV ion beam bombardment was observed, including generated defects and voids in the crystal. We show that the 60 eV ion beam yields improvement in the metal-MoS 2 interface by decreasing the contact resistance from 17.5 kΩ • µm to 6 kΩ • µm at a carrier concentration of n 2D = 5.4 × 10 12 cm −2. These results advance the use of low-energy ion beams to modify 2D materials and interfaces for tuning and improving performance in applications of sensors, transistors, optoelectronics, and so forth.

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Section: Modification Of Metal-2d Materials Interfacementioning

confidence: 99%

Convergent ion beam alteration of 2D materials and metal-2D interfaces

Cheng

Abuzaid

et al. 2019

2D Mater.

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“…(f‐g): Reproduced with permission. [ 89 ] Copyright 2019, American Chemical Society. h) Comparison of the output characteristics of the FET fabricated on both irradiated and pristine MoS 2 with Ni contact.…”

Section: Top–down Approachesmentioning

confidence: 99%

Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

et al. 2021

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Two‐dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate their technological readiness, it is essential to develop controllable synthesis and processing techniques to precisely engineer the compositions and phases of 2D TMDs. While most reviews emphasize properties and applications of doped TMDs, here, recent progress on thin‐film synthesis and processing techniques that show excellent controllability for substitutional doping of 2D TMDs are reported. These techniques are categorized into bottom–up methods that grow doped samples on substrates directly and top–down methods that use energetic sources to implant dopants into existing 2D crystals. The doped and alloyed variants from Group VI TMDs will be at the center of technical discussions, as they are expected to play essential roles in next‐generation optoelectronic applications. Theoretical backgrounds based on first principles calculations will precede the technical discussions to help the reader understand each element's likelihood of substitutional doping and the expected impact on the material properties.

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“…Thus, the true interface in most devices features some surface oxide with far-reaching consequences for the design and operation of these devices. Cheng et al [133] utilized the knowledge of these interfacial phase transformations and oxidation across surface edge sites to develop a low-contact-resistance interface of Ni and edges of MoS 2 using in situ Ar + -beam-assisted etching of MoS 2 before Ni deposition. This was done to ensure that the highly active edge sites that have reacted with ambient species (H 2 O, O 2 etc.)…”

Section: Phase Transformations At Layered MC Interfacesmentioning

confidence: 99%

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

et al. 2021

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Layered metal chalcogenide materials, such as MoS2 and Bi2Te3, have found important applications as 2D materials in emerging electronic devices. To create nanoscale layered chalcogenide materials with precisely controlled structures and properties, it is critical to understand and control how they evolve and transform under various conditions. This Minireview presents an overview of recent research focused on using in situ characterization to understand the atomic‐scale details of transformations during growth, under exposure to reactive chemical and thermal environments, and on interfacing with other materials. These efforts have used techniques including in situ transmission electron microscopy (TEM), X‐ray spectroscopy, and optical methods to understand nanoscale transformations. These in situ studies have provided a substantially improved understanding of transformation mechanisms in layered chalcogenide materials, which is an important step toward the use of these interesting materials in a variety of electronic and electrochemical devices.

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Immunity to Contact Scaling in MoS₂ Transistors Using in Situ Edge Contacts

Cited by 100 publications

References 60 publications

Convergent ion beam alteration of 2D materials and metal-2D interfaces

Convergent ion beam alteration of 2D materials and metal-2D interfaces

Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

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Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts

Cited by 100 publications

References 60 publications

Convergent ion beam alteration of 2D materials and metal-2D interfaces

Convergent ion beam alteration of 2D materials and metal-2D interfaces

Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

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Immunity to Contact Scaling in MoS₂ Transistors Using in Situ Edge Contacts