Inorganic CsPbX (X = Cl, Br, I, or hybrid among them) perovskite quantum dots (IPQDs) are promising building blocks for exploring high performance optoelectronic applications. In this work, the authors report a new hybrid structure that marries CsPbX IPQDs to silicon nanowires (SiNWs) radial junction structures to achieve ultrafast and highly sensitive ultraviolet (UV) detection in solar-blind spectrum. A compact and uniform deployment of CsPbX IPQDs upon the sidewall of low-reflective 3D radial junctions enables a strong light field excitation and efficient down-conversion of the ultraviolet incidences, which are directly tailored into emission bands optimized for a rapid photodetection in surrounding ultrathin radial p-i-n junctions. A fast solar-blind UV detection has been demonstrated in this hybrid IPQD-NW detectors, with rise/fall response time scales of 0.48/1.03 ms and a high responsivity of 54 mA W @200 nm (or 32 mA W @270 nm), without the need of any external power supply. These results pave the way toward large area manufacturing of high performance Si-based perovskite UV detectors in a scalable and low-cost procedure.

achieved after 1000 cycles at 3.4 A g −1 (or 20 A g −1 ), with a capacity retention rate of ≈84% (≈88%), without the use of any binder or conductive agent. Remarkably, they can survive an extremely fast charging rate at 70 A g −1 for 35 runs (corresponding to one full cycle in 30 s) and recover 88% capacity. This novel alloy-nanotube structure could represent an ideal candidate to fulfi ll the true potential of Si-loaded LIB applications.

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