The advent of graphene has evoked the re-examination of band topology of Dirac/Weyl nodal materials which can host low-energy realistic quasiparticles. Under strong magnetic fields, the topological properties of two-dimensional Dirac/Weyl materials can be directly manifested through quantum Hall states. Here we report the first observation of massive Weyl fermions through quantum Hall effect in n-type Weyl semiconductor tellurene (two-dimensional form of tellurium). The n-type doping profile forms a wide quantum well in tellurene, where two correlated layers of electrons create a pair of symmetric-antisymmetric energy states in addition to spin and valley degeneracy, leading to an approximate SU(8) isospin symmetry. The chirality-induced Weyl nodes residing near the edge of the conduction band give rise to radial spin texture, and topologically non-trivial  Berry phase was detected in quantum Hall sequences. Our work presents strong evidence of massive Weyl fermions and expands the spectrum of Weyl matters into semiconductor regime.

A ferroelectric semiconductor junction is a promising two-terminal ferroelectric device for nonvolatile memory and neuromorphic computing applications. In this work, we propose and report the experimental demonstration of asymmetric metal/α-In2Se3/Si crossbar ferroelectric semiconductor junctions (c-FSJs). The depletion in doped Si is used to enhance the modulation of the effective Schottky barrier height through the ferroelectric polarization. A high-performance α-In2Se3 c-FSJ is achieved with a high on/off ratio > 104 at room temperature, on/off ratio > 103 at an elevated temperature of 140 °C, retention > 104 s, and endurance > 106 cycles. The on/off ratio of the α-In2Se3 asymmetric FSJs can be further enhanced to >108 by introducing a metal/α-In2Se3/insulator/metal structure.

Small cell lung cancer (SCLC) is a severe malignant with high morbidity; however, few effective and secure therapeutic strategy is used in current clinical practice. Oridonin is a small molecule from the traditional Chinese herb Rabdosia rubescens. This study mainly aimed to investigate the role of oridonin on inhibiting the process of H1688, a kind of small cell lung cancer cells from human. Oridonin could suppress H1688 cell proliferation and induce their apoptosis in a high dosage treatment (20 μmol/L).Meanwhile, cell migration was suppressed by oridonin (5 and 10 μmol/L) that did not affect cell proliferation and apoptosis. The expression level of E-cadherin was significantly increased, and the expression of vimentin, snail and slug was reduced after administration of oridonin. These expression changes were associated with the suppressed integrin β1, phosphorylation of focal adhesion kinase (FAK) and ERK1/2.In addition, oridonin (5 and 10 mg/kg) inhibited tumour growth in a nude mouse model; however, HE staining revealed a certain degree of cytotoxicity in hepatic tissue after treatment oridonin (10 mg/kg). Furthermore, the concentration of alanine aminotransferase (ALP) was significantly increased and lactate dehydrogenase (LDH) was reduced after oridonin treatment (10 mg/kg). Immunohistochemical analysis further revealed that oridonin increased E-cadherin expression and reduced vimentin and phospho-FAK levels in vivo. These findings indicated that oridonin can inhibit the migration and epithelial-to-mesenchymal transition (EMT) of SCLC cells by suppressing the FAK-ERK1/2 signalling pathway. Thus, oridonin may be a new drug candidate to offer an effect of anti-SCLC with relative safety. K E Y W O R D Sfocal adhesion kinase, migration, oridonin, small cell lung cancer | 4481 XU et al.

Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer deposited dielectric doping technique, we are able to access the conduction band transport properties of Te in a controlled fashion. In this paper, we report on a systematic study of weakantilocalization (WAL) effect in n-type two-dimensional (2D) Te films. We find that the WAL agrees well with Iordanskii, Lyanda-Geller, and Pikus (ILP) theory. The gate and temperature dependent WAL reveals that D'yakonov-Perel (DP) mechanism is dominant for spin relaxation and phase relaxation is governed by electron-electron (e-e) interaction. Large phase coherence length near 600nm at T=1K is obtained, together with gate tunable spin-orbit interaction (SOI). Transition from weak-localization (WL) to weak-antilocalization (WAL) depending on gate bias is also observed. These results demonstrate that newly developed solution-based synthesized Te films provide a new controllable strong SOI 2D semiconductor with high potential for spintronic applications.

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