Asymmetric Metal/α-In<sub>2</sub>Se<sub>3</sub>/Si Crossbar Ferroelectric Semiconductor Junction

Si, Mengwei; Zhang, Zhuocheng; Chang, Sou-Chi; Haratipour, Nazila; Zheng, Dongqi; Li, Junkang; Avci, Uygar E.; Ye, Peide D.

doi:10.1021/acsnano.1c00968

Cited by 55 publications

(45 citation statements)

References 28 publications

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“…Si et al demonstrated a two-terminal ferroelectric semiconductor heterojunction device in crossbar formation (C-FSJ) using α-In 2 Se 3 and heavily-doped silicon. [133] The C-FSJ device achieved high on/off ratio > 10 4 at room temperature, retention > 10 4 s, and endurance > 10 6 cycles. The on/off ratio of the α-In 2 Se 3 asymmetric FSJs can be further enhanced to > 10 8 by introducing a metal/α-In 2 Se 3 /insulator/metal structure (Figure 13…”

Section: Memory Devicesmentioning

confidence: 91%

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Indium Selenide (In₂Se₃) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Mukherjee

Koren

2022

Israel Journal of Chemistry

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The search for ultrathin and robust ferroelectrics leads to few promising two-dimensional (2D) materials. In 2 Se 3 has drawn special attention owing to the existence of intercoupled in-plane (IP) and out-of-plane (OOP) ferroelectricity in monolayer form, which makes it a potential candidate for emerging artificial intelligence, information processing and memory applications. In addition, the high optical absorption and phase-dependent visible to infrared bandgap become advantageous from optoelectronics point-of-view. This unique ferroelectric and optoelectronic coupling further leads to explore atomic-scale multifunctional devices. In this review, we summarized the progress of non-volatile memory (NVM) and photodetector devices, and their intercoupled applications using 2D In 2 Se 3 . We expect that this review will provide an insight towards the promising future of 2D ferroelectric-(opto)electronics and motivate researchers for further development towards industrial scale.

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Section: Memory Devicesmentioning

confidence: 91%

“…Si et al. demonstrated a two‐terminal ferroelectric semiconductor heterojunction device in crossbar formation (C‐FSJ) using α‐In 2 Se 3 and heavily‐doped silicon [133] . The C‐FSJ device achieved high on/off ratio >10 4 at room temperature, retention >10 4 s, and endurance >10 6 cycles.…”

Section: Device Applicationsmentioning

confidence: 99%

Indium Selenide (In₂Se₃) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Mukherjee

Koren

2022

Israel Journal of Chemistry

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“…Compare with the symmetric “metal‐α In 2 Se 3 ‐metal” c‐FSJ, the depletion region in the p + Si electrode can modulate the height of the Schottky barrier through the polarization of the middle In 2 Se 3 . Through I – V characteristics, the asymmetric c‐FSJ exhibits a high on/off ratio of 10 4 at 0.2 V, which is significantly higher than that of the symmetric c‐FSJ 57,117 . In addition, α In 2 Se 3 ‐based asymmetric c‐FSJ has a strong ability of high‐temperature resistance.…”

Section: Electronic Devices Based On Ferroelectric 2d In2se3 For Data...mentioning

confidence: 97%

Two‐dimensional In₂Se₃: A rising advanced material for ferroelectric data storage

Huang

Chen

et al. 2022

InfoMat

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Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory owing to its outstanding performance such as low power consumption, fast speed, and high endurance. However, the ferroelectricity of conventional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer scale. As a result, the miniaturization of ferroelectric devices was hindered, which makes ferroelectric memory unable to keep up with the development of integrated‐circuit (IC) miniaturization. Recently, a two‐dimensional (2D) In2Se3 was reported to maintain stable ferroelectricity at the ultrathin scale, which is expected to break through the bottleneck of miniaturization. Soon, devices based on 2D In2Se3, including the ferroelectric field‐effect transistor, ferroelectric channel transistor, synaptic ferroelectric semiconductor junction, and ferroelectric memristor were demonstrated. However, a comprehensive understanding of the structures and the ferroelectric‐switching mechanism of 2D In2Se3 is still lacking. Here, the atomic structures of different phases, the dynamic mechanism of ferroelectric switching, and the performance/functions of the latest devices of 2D In2Se3 are reviewed. Furthermore, the correlations among the structures, the properties, and the device performance are analyzed. Finally, several crucial problems or challenges and possible research directions are put forward. We hope that this review paper can provide timely knowledge and help for the research community to develop 2D In2Se3 based ferroelectric memory and computing technology for practical industrial applications.

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“…They could overcome the challenges faced by traditional ferroelectrics and have good applications in ultrahigh density and ultrafast speed memory, [ 30–33 ] optoelectronic multifunctional memories, [ 34,35 ] and ferroelectric semiconductor field‐effect transistors. [ 3,36,37 ] These materials usually have polar point group structure, such as 3m α‐In 2 Se 3 and m CuInP 2 S 6 . Yet, to introduce polar structure into otherwise nonpolar 2D materials to produce ferroelectricity, which enables more functionality and more flexible controllability, remains a challenge.…”

Section: Introductionmentioning

confidence: 99%

Discovery of Robust Ferroelectricity in 2D Defective Semiconductor α‑Ga₂Se₃

Xue

Jiang

Wang

et al. 2021

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2D ferroelectrics with robust polar order in the atomic‐scale thickness at room temperature are needed to miniaturize ferroelectric devices and tackle challenges imposed by traditional ferroelectrics. These materials usually have polar point group structure regarding as a prerequisite of ferroelectricity. Yet, to introduce polar structure into otherwise nonpolar 2D materials for producing ferroelectricity remains a challenge. Here, by combining first‐principles calculations and experimental studies, it is reported that the native Ga vacancy‐defects located in the asymmetrical sites in cubic defective semiconductor α‑Ga2Se3 can induce polar structure. Meanwhile, the induced polarization can be switched in a moderate energy barrier. The switched polarization is observed in 2D α‑Ga2Se3 nanoflakes of ≈4 nm with a high switching temperature up to 450 K. Such polarization switching could arise from the displacement of Ga vacancy between neighboring asymmetrical sites by applying an electric field. This work removes the point group limit for ferroelectricity, expanding the range of 2D ferroelectrics into the native defective semiconductors.

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Asymmetric Metal/α-In₂Se₃/Si Crossbar Ferroelectric Semiconductor Junction

Cited by 55 publications

References 28 publications

Indium Selenide (In₂Se₃) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Indium Selenide (In₂Se₃) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Two‐dimensional In₂Se₃: A rising advanced material for ferroelectric data storage

Discovery of Robust Ferroelectricity in 2D Defective Semiconductor α‑Ga₂Se₃

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Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction

Cited by 55 publications

References 28 publications

Indium Selenide (In2Se3) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Indium Selenide (In2Se3) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage

Discovery of Robust Ferroelectricity in 2D Defective Semiconductor α‑Ga2Se3

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About

Asymmetric Metal/α-In₂Se₃/Si Crossbar Ferroelectric Semiconductor Junction

Indium Selenide (In₂Se₃) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Indium Selenide (In₂Se₃) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Two‐dimensional In₂Se₃: A rising advanced material for ferroelectric data storage

Discovery of Robust Ferroelectricity in 2D Defective Semiconductor α‑Ga₂Se₃