Developing high‐quality electret layer is important for the fabrication of high‐performance nonvolatile organic field effect transistor memory devices (OFET‐NVMs). In this work, three representative aromatic diimide frameworks are employed for comparative studies as n‐type doping materials for the electret layers in OFET‐NVMs, which are naphthalene diimide (NDI), perylene diimide (PDI), and pyrene diimide (PyDI). When blended with polystyrene (PS) to prepare the electret layers, all the memory devices containing aromatic diimide dopants exhibited significantly improved performances compared with the undoped counterparts, indicating that low‐lying LUMO energy levels of these dopants are beneficial for charge injection. All the devices with n‐type dopants exhibited long retention times (more than 104 s) and good switching reliability in more than 400 continuous write‐read‐erase‐read cycles. Among them, the PyDI‐based memory device exhibited superior performance compared with other aromatic diimides, which achieved a memory window of 34.0 V, a trapping charge density of 1.98 × 1012 cm−2 along with an on/off ratio higher than 104. This work indicates that PyDI framework could be a new platform for the future design of n‐type dopant for high‐performance nonvolatile organic field‐effect transistor memory devices.

Two small molecule donors achieved over 5% PCEs when combined with fullerene, non-fullerene or blended acceptors.

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As stated in the classic Kirchhoff's circuit laws, the total conductance of two parallel channels in an electronic circuit is the sum of the individual conductance. However, in molecular circuits, the quantum interference (QI) between the individual channels may lead to apparent invalidity of Kirchhoff's laws. Such an effect can be very significant in single‐molecule circuits consisting of partially overlapped multiple transport channels. Herein, an investigation on how the molecular circuit conductance correlates to the individual channels is conducted in the presence of QI. It is found that the conductance of multi‐channel circuit consisting of both constructive and destructive QI is significantly smaller than the addition of individual ones due to the interference between channels. In contrast, the circuit consisting of destructive QI channels exhibits an additive transport. These investigations provide a new cognition of transport mechanism and manipulation of transport in multi‐channel molecular circuits.