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P‐type Sn1−xGexSe (x=0‐0.03) polycrystals were prepared through direct melting synthesis method. The composition and microstructure of the samples were analyzed, and the thermoelectric transport properties were investigated in temperatures ranging from 303 to 773 K. The results indicate that the electrical conductivity decreases as Ge content increases. A significant improvement was found for the Seebeck coefficient. The maximal value of 647 μV/K was achieved at 473 K for the sample of Sn0.97Ge0.03Se. The Hall transport properties result indicates that the carrier concentration decreases with Ge content increasing at room temperature. In addition, the total thermal conductivities (κtot) of all samples decrease with rising temperature.