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Films obtained using molecular-beam deposition of SiO powder on c-Si (111) substrates for the purpose of SiO 2 system formation with silicon nanocrystals were investigated before and after 900-1100 • C annealing by photoluminescence, ultrasoft X-ray emission spectroscopy, X-ray photoelectron spectroscopy, X-ray absorption near edge structure spectroscopy and X-ray diffraction. The appearance of (111) oriented luminescent silicon nanoclusters in considerable amounts on annealing at 1000-1100 • C is established in the investigated films. An anomalous phenomenon of the X-ray absorption quantum yield intensity inversing for the L 2,3 elementary silicon edge is detected. Models for this phenomenon are suggested.

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