Memristors are widely considered as promising elements for the efficient implementation of synaptic weights in artificial neural networks (ANNs) since they are resistors that keep memory of their previous conductive state. Whereas demonstrations of simple neural networks (e.g., a single-layer perceptron) based on memristors already exist, the implementation of more complicated networks is more challenging and has yet to be reported. In this study, we demonstrate linearly nonseparable combinational logic classification (XOR logic task) using a network implemented with CMOS-based neurons and organic memrisitive devices that constitutes the first step toward the realization of a double layer perceptron. We also show numerically the ability of such network to solve a principally analogue task which cannot be realized by digital devices. The obtained results prove the possibility to create a multilayer ANN based on memristive devices that paves the way for designing a more complex network such as the double layer perceptron.

We demonstrate the functioning of a macromolecular nanoreactor which guides a reaction in a confined volume and leads toward improved functional properties of a product material. In our approach, the polymerization of aniline (ANi) is conducted within the interfacial volume of spherical polyelectrolyte brushes (SPB) which are densely affixed to colloidal particles. The SPB provide optimal conditions for matrix polymerization by the efficient confinement of ANi monomers within the finite volume of polyelectrolyte brushes and controlled delivery of the oxidizing reagent to the reaction volume. The excellent kinetic stability of the resulting core-shell particles together with the high macroscopic conductivity of the respective composite open up perspectives for novel materials (a conductive ink).

Polyaniline (PANI)‐based sensor material for determination of ascorbic acid was synthesized by oxidative chemical polymerization of aniline on a screen‐printed carbon‐paste electrode. The influence of PANI chemical structure formed under various polymerization conditions on the sensor response was investigated. The presence of aniline dimer derivatives in PANI structure was found to induce significant improvement of the limit of detection and the linear dynamic range without a change in sensitivity. The sensor prepared by aniline polymerization in pH 7 buffer leading to the product containing mainly the aniline dimer‐based units showed the best detection limit of 0.1 µM. It was shown that the PANI‐based sensor could be used for ascorbic acid analysis in the presence of citrate and lactate as interfering ions. A quantitative determination of ascorbic acid concentration in beverages and vitamins was performed.

The memristive elements constructed using polymers - polyaniline (PANI) and polyethyleneoxide (PEO) - could be assembled on planar thin films or on 3D fibrous materials. Planar conductive PANI-based materials were made using the Langmuir-Schaefer (LS) method, and the 3D materials - using the electrospinning method which is a scalable technique. We have analyzed the influence of PANI molar mass, natures of solvent and subphase on the crystalline structure, thickness and conductivity of planar LS films, and the influence of PANI molar mass and the PANI-PEO ratio on the morphological and structural characteristics of 3D fibrous materials.

materials makes the elements cheap and easy to manufacture. Moreover, organic materials allow simple chemical modification of the electrophysical properties and fabrication of flexible and stochastic 3D elements. [15-18] One of the first and most studied types of the organic memristive devices are polyaniline (PANI) based devices. [19-26] The structure and electrophysical properties of the PANI-based memristive devices are described elsewhere. [20] The main active component of the device is a thin PANI film connecting two metal electrodes. The third electrode is a silver wire separated from the film by a layer of solid electrolyte. The silver wire ("gate") is always connected to one of the substrate electrodes ("drain"), while the voltage is applied to the second one ("source"), as shown in Figure 1a. The RS is driven by a voltage-controlled electrochemical reaction at the PANI-electrolyte interface. The device switches to the low resistive state (LRS) under applied voltage exceeding the value of +0.4 V and to the high resistive state (HRS) under applied voltage less than +0.1 V. Its conductivity remains quite stable in the window between these values. Nonzero current at zero bias voltage is an essential and inevitable feature of all redox-based memristive devices. [27] The devices were shown to be stable for at least 10 4 switching cycles and able to hold each programmed resistive state for at least 10 3 s. [28,29] A detailed description of the switching mechanism is previously published. [21,22] During the RS, the insulating leucoemeraldine form of PANI transforms into the conductive emeraldine salt form and vice versa according to the following equation