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Present work is devoted to determination the regularity of change of specific resistance and Schottky barrier height of nickel films on n-type silicon (111) at their rapid thermal treatment in the temperatures range from 200 to 550 °C. Nickel films of about 60 nm thickness were deposited by magnetron sputtering onto the silicon substrates having a resistivity of 0.58 to 0.53 Ohms×cm. The rapid thermal treatment was carried out in the range of 200 to 550 °C under heat balance mode by irradiating the backside of the substrates with non-coherent light flux in nitrogen ambient for 7 seconds. The thickness of the nickel films was determined by scanning electron microscopy. The sheet resistance of the samples was measured by a four-probe method. The Schottky barrier height was determined from I-V plots. It is shown that at a temperatureы of rapid thermal treatment of Ni/n-Si (111) 200–250 °C nickel will be transformed to Ni2Si, increasing in thickness by 1.15–1.33 times, specific resistance increases to 26–30 μOhm×cm, and Schottky barrier height decreases from 0.66 to 0.6 V. At a rapid thermal treatment temperature of 300°C the initial nickel film thickness increases by 1.93 times, the resistivity and Schottky barrier height decrease to 26–30 μOhm×cm and 0.59 V respectively due to the conversion of the Ni2Si into NiSi and the fixation of the barrier height by surface states at the silicidesilicon interface. Rapid thermal treatment of 350–550 °C transforms the original nickel film into NiSi, increases its thickness by 2.26–2.67 times, reduces its resistivity to 15–18 μOhm×cm and increases the Schottky barrier height to 0.62–0.64 V. The minimum defects and better reproducibility of electrophysical properties are characterized by NiSi films formed by rapid thermal treatment of nickel films on n-type silicon at a temperature of 400–450 °C. The results obtained can be used in the technology of integrated electronics products containing rectifying contacts.

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The formation of nickel silicide layers on (111)-Si substrates during rapid thermal annealing in the heat balance mode was studied by the Rutherford backscattering method, X-ray diffraction, transmission electron microscopy, and electrophysical measurements. Nickel films of about 70 nm thickness were deposited by magnetron sputtering at room temperature. The rapid thermal treatment was carried out in a heat balance mode by irradiating the substrates backside with a non-coherent light flux of quartz halogen lamps in the nitrogen medium for 7 seconds up to the temperature range of 200 to 550 °C. The redistribution of nickel and silicon atoms to monosilicide NiSi composition starts already at a temperature of 300 °С and almost ends at a temperature of 400 °С. In the same temperature range, the orthorhombic NiSi phase with an average grain size of about 0.05–0.1 μm is formed. At a rapid thermal treatment temperature of 300 °C, two phases of silicides (Ni2 Si and NiSi) are formed, while a thin layer of unreacted Ni is retained on the surface. This fact can be explained by the high heating rate at the initial annealing stage, at which the temperature conditions of the NiSi phase formation occur earlier than the entire Ni layer manages to turn into the Ni2 Si phase. The layers with a simultaneous presence of three phases are characterized by a high roughness of the silicide-silicon interface. The dependence of the specific resistivity of nickel silicide layers shows an increase to the values of 26–30 μOhm · cm in the range of rapid thermal treatment temperatures of 200–250 °C and a subsequent decrease to the values of about 15 μOhm · cm at a rapid thermal treatment temperature of 400 °C. This value of specific resistivity is characteristic of the high conductivity of the NiSi phase and correlates well with the results of structure studies.

The aim of the paper — is to present the results of the consensus on the terminology used to describe data of high-resolution anorectal manometry.Methods: Online survey was conducted with the help of the public platform “Google forms” with the aim to harmonize the terms, which are used to conduct high-resolution anorectal manometry (HRAM), to agree the conformity of the proposed Russian-language terms to those used in English-language literature, and their abbreviations.Results: According to the aim, 56 specialists of different medical specialties who perform and use the results of HRAM in clinical practice and research were invited to participate in the survey. We received 45 answers from the respondents (42.2% coloproctologists, 22.2% gastroenterologists, 15.6% surgeons, 20% — representatives of other specialties). The response rate was 80.3%. According to the survey, 95.6% of respondents supported the need for harmonization of terms. Ten out of the 11 terms reached consensus level C1 (excellent), 1 term level of consistency was C2 (moderate). 90.9% of respondents (consensus level C1) were in favor of the appropriateness of using common abbreviations. However, the proposed abbreviations of the terms used in the conduct and description of the results of the HRAM can be accepted with reservations (in 10 cases out of 11 consensus level was C2).Conclusions: The agreed in interdisciplinary consensus terms can be approved and recommended for the use in clinical practice and when research data are published in Russian-language scientific literature.