The formation of the double InSb/GaInSb/InSb heterostructure in self-catalyzed and Au-catalyzed nanowires is studied theoretically. We calculate the compositional profiles across the axial heterostructures and study the influence of different growth parameters on the heterointerface properties, including temperature, Sb and Au concentrations.

The formation of tapered self-catalyzed nanowires grown on reflecting substrates is studied theoretically. Within the model the nanowire radius is obtained as a function of length. The model describes the morphology of tapered nanowires. We study the influence of different growth parameters on the nanowire morphology, including the III/V flux ratio and pitch.

A model is developed for the initial stage of nucleation of III-V nanowires including nitrides (III-V NWs) and other nanostructures grown by selective area epitaxy on masked substrates with regular arrays of pinholes. A criterion for the growth selectivity is obtained, which ensures nucleation of III-V NWs within the pinholes but not on a mask surface. The temperature, group III and V fluxes, pinhole radius and pitch dependences of the selective growth zones are analyzed

A technique for synthesizing nanostructures by current lithography in a scanning tunneling microscope (STM lithography) in layered Au/Si structures has been developed. An experimental dependence of the geometric dimensions of the created nanostructures on the time of current STM lithography has been obtained. A theoretical model for the growth of nanostructures is proposed, which explains the nonlinear dependence of the radius of the obtained nanostructures on time with saturation in the region of large radii. Keywords: Au/Si nanostructures, STM lithography, growth rate, modeling.