The formation of tapered self-catalyzed nanowires grown on reflecting substrates is studied theoretically. Within the model the nanowire radius is obtained as a function of length. The model describes the morphology of tapered nanowires. We study the influence of different growth parameters on the nanowire morphology, including the III/V flux ratio and pitch.

A model is developed for the initial stage of nucleation of III-V nanowires including nitrides (III-V NWs) and other nanostructures grown by selective area epitaxy on masked substrates with regular arrays of pinholes. A criterion for the growth selectivity is obtained, which ensures nucleation of III-V NWs within the pinholes but not on a mask surface. The temperature, group III and V fluxes, pinhole radius and pitch dependences of the selective growth zones are analyzed

The formation of the double InSb/GaInSb/InSb heterostructure in self-catalyzed and Au-catalyzed nanowires is studied theoretically. We calculate the compositional profiles across the axial heterostructures and study the influence of different growth parameters on the heterointerface properties, including temperature, Sb and Au concentrations.