The results of studying the influence of the thickness of La0.7Sr0.3MnO3 films obtained by magnetron sputtering on (110) NdGaO3 substrates on the magnetic and crystallographic properties using ferromagnetic resonance and X-ray spectroscopy are presented. The dependences of the uniaxial and cubic anisotropy fields on the sample thickness are established. Furthermore, it is shown that the magnetic and crystallographic properties of a film obtained by magnetron sputtering strongly depend on the target region from which it is made. The results obtained will be useful for interpreting the experimental data and creating a series of samples.

We investigate a mathematical model of a terahertz electromagnetic wave detector based on a conducting antiferromagnet and a heavy metal. The mechanism of resonant straightening of oscillations is based on the inverse spin Hall effect in a heavy metal under spin pumping from an antiferromagnet. It is shown that the frequency dependence of the constant voltage of the detector has a resonant character with a peak corresponding to the frequency of antiferromagnetic resonance. The sensitivity to an alternating terahertz signal of the proposed detector structure is comparable to the sensitivity of modern detectors based on Schottky and Gunn diodes.

We study a model of a detector of subterahertz electromagnetic waves based on an array of heterostructures containing an antiferromagnet and a heavy metal. We show that the operating frequency of the detector can be tuned by a constant magnetic field applied in the direction of the easy magnetization axis of the antiferromagnet. The dependence of the rectified voltage on the frequency of the external electromagnetic wave for different values ​​of the constant magnetic field is resonant in nature, and an increase in the constant magnetic field leads to an increase in the resonance peak. It is shown that the use of an array of antiferromagnets in the form of a comb structure makes it possible to increase the level of the rectified output voltage.