In this work, the influence of substrate temperature on morphological and optical properties of branched InGaN nanostructures on the Si(111) surface during MBE growth was studied. It was shown that an increase of the substrate temperature leads to a change in the morphology of InGaN nanostructures. In particular, the height of InGaN nanocolumns, which are formed at the initial stage of growth, increases. At the same time, an increase in the growth temperature of InGaN nanostructures leads to an increase in the intensity of the photoluminescence spectra from such structures, and the dependences of the integrated photoluminescence intensity on the excitation power are linear in both cases. All these facts indicate the promise of such structures for optical applications, for example, for creating white LEDs based on a single material

Приведены данные по росту и исследованию свойств наноструктур типа " вставка InAsP, внедренная в InP нитевидный нанокристалл", выращенных на поверхности Si(111) методом молекулярно-пучковой эпитаксии с использованием золота в качестве катализатора. Установлено, что возможно получение практически 100% когерентных нитевидных нанокристаллов с поверхностной плотностью, варьируемой в широком интервале, и установлена взаимосвязь между структурными и оптическими свойствами выращенных нитевидных нанокристаллов. Показано, что исследуемые нитевидные нанокристаллы являются чистыми с точки зрения кристаллографической фазы (вюрцит). Предлагаемая технология открывает новые возможности по интеграции прямозонных соединений A III B V и кремния.

The spontaneous synthesis of InGaN/GaN nanowires of core-shell heterostructure using molecular beam epitaxy isinvestigated in the work. It is shown by electron microscopy that a wedge-shaped crack can form at In content x=0.4 and 0.04 in the core and shell correspondent. Based on the model of internal structural stresses, a formula is proposed for estimation of the critical size and composition for the formation of cracks in NWs.The estimations and experimental data of morphology agree with each other.

We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.

We present the results on the selective-area growth of GaN nanowires using a molecular beam epitaxy technique on patterned SiOx/Si substrates without any seed layers. The patterned SiOx/Si substrates were prepared by the simple microlens photolithography method. The influence of the substrate temperature on the morphological properties of GaN nanowires was investigated. The optimal growth parameters for the selective-area growth of GaN nanowires were experimentally determined.