The paper reports on the developed technique for polishing single-crystal silicon substrates using a mechanical lap. The effective substrate roughness was obtained in the spatial frequency range of 0.025–65 µm-1 at the level of 0.37 nm and 0.18 nm at a frame size on the surface of 2х2 µm2. The result obtained is comparable with the results of chemical-mechanical and dynamic polishing of single-crystal silicon wafers for microelectronics.
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