The effect of proton irradiation (proton energy 15 MeV) on the parameters of high-voltage 4H-SiC integrated Schottky diodes (JBS) was studied for the first time in the operating temperature range Ti (23 and 1750C). The blocking voltage of the diodes under study, Ub, was 600 and 1700 V. For devices with Ub = 600 V, the fluence range was 5×1013–1×1014 cm-2; for devices with Ub = 1700 V, the fluence range was 3×1013 – 6×1013 cm-2. An increase in the irradiation temperature leads to a noticeable decrease in the effect of irradiation on the current-voltage characteristics of the diodes. The effect of annealing on the current-voltage characteristics of irradiated devices is studied.

The effect of annealing on the parameters of 4H-SiC Schottky diodes irradiated with electrons at high temperatures has been studied for the first time. The electron energy was 0.9 MeV. The irradiation was carried out at temperatures of 23, 300, and 500oС at fluences  in the range 1×1016 – 1.3×1017 cm-2. The results of annealing after the irradiation at high temperatures are qualitatively different from the results of annealing after conventional irradiation at room temperature with the same fluencies. The results obtained indicate that the spectrum of radiation defects introduced into SiC under a high-temperature (“hot”) irradiation differs significantly from that of defects introduced by irradiation at room temperature. At irradiation temperatures of 300 and 500°C and large, the effect of "reverse annealing" was revealed, when the base resistance grows rather than falling as a result of annealing.