The work is devoted to the development, fabrication and analysis of broadband W / Si multilayer mirrors for a broadband monochromator, calculated for the spectral range of 7–10 keV. The possibility of using the stacking approach to obtain multilayer mirrors with a reflection coefficient of about 30% and a spectral bandwidth ΔE / E of about 20% is shown. The results of measurements of the angular and spectral reflection curves of the mirror obtained on a laboratory diffractometer and on a synchrotron in Novosibirsk are presented.

A project of an X-ray monochromator for the «SKIF» synchrotron based on two flat mirrors with multilayer reflective coatings is reported. The concept of the monochromator is based on the absence of precision mechanical systems and feedthroughs in vacuum, which significantly reduces mirror surface contamination and increases scanning accuracy. In addition, the overall structure of the device is greatly simplified in this way, which in turn leads to a significant reduction in the total cost and labor for manufacturing. The grazing angle of incidence of radiation on the mirrors in the process of scanning by photon energy varies within 0.5-1.3º. The length of the mirrors is 120 mm, the assumed size of the input beam is 1×1 mm2. A wide operating energy range, 8-36 keV, is achieved through the use of 3 strip-mirrors with coatings of different chemical composition, namely: Mo/B4C, W/B4C and Cr/Be. The article presents the X-ray optical scheme, the expected reflection coefficients and spectral selectivity of the monochromator, the results of the calculation of thermally induced surface deformations and the corresponding slope errors of the first mirror.

By the method of ion-beam shape correction, a small-sized ion beam formed a non–axisymmetric aspherical profile of the collector surface for an extreme ultraviolet radiation source TEUS-S100 with a numerical aperture of NA= 0.25, PV on the surface is 36.3 microns, the surface shape accuracy by standard deviation is 0.074 microns, which allowed to obtain a focusing spot with a width of 300 microns at half-height. To solve the problem, the technological ion source KLAN-53M was upgraded – the flat ion-optical system was replaced with a focusing one. The ion-optical system consisting of a pair of concave grids with a radius of curvature of 60 mm provided the following parameters of the ion beam: the ion current is 20 mA, the width at half–height is 8.2 mm at a distance of 66 mm from the cutoff of the ion source.