Expressions for the Auger- and radiative-recombination rates are derived in terms of Kane’s model for materials with a band-gap width close to the spin-orbit splitting energy, which is the case for InAs, InAsSb solid solutions, etc. Our results are compared with simplified expressions for recombination rates, frequently used in publications. It is shown that the nonparabolicity of the electronic structure should be taken into account in calculations of the recombination rates. As an example, the temperature dependences of the charge-carrier lifetimes governed by radiative and non-radiative processes are calculated for InAsSb solid solutions.

Capabilities of Metal Organic Chemical Vapor Deposition (MOCVD) method for fabrication of multi-layer InAs/GaSb structures with thin (1-2 nm) layers on GaSb substrates were studied. Properties of fabricated structures were studied by transmission electron microscopy and photo- and electro-luminescence. It was found that during growth, two solid solutions GaInAsSb of different compositions were formed in the active region of the structures. The system obtained is characterized by emission at the wavelength of 4.96 µm at the temperature 77 K. Our results demonstrate new capabilities of MOCVD method for bandgap engineering of semiconductor structures based on InAs/GaSb and designed for optoelectronic devices for infrared wavelength range.

A detailed analysis of the mechanisms of radiative and Auger recombination in type I and II heterostructures based on narrow-gap AIIIBV materials is presented. It is shown that the presence of a heterointerface fundamentally changes the nature of these recombination processes differently, depending on the type of heterojunction. Results of our study of the electroluminescence of type I and II LED heterostructures based on InAs(Sb)/InAsSbP quantum wells are presented. It is shown that the increase in relative efficiency of radiative recombination in type II heterostructures due to suppression of Auger recombination contributes to generation of stimulated emission in these heterostructures at low temperatures (4.2−70K).