Effects of air exposure on surface properties, electronic structure, and carrier relaxation dynamics in colloidal PbSe nanocrystals (NCs) were studied using X-ray photoelectron spectroscopy, transmission electron microscopy, and steady-state and time-resolved photoluminescence (PL) spectroscopies. We show that exposure of NC hexane solutions to air under ambient conditions leads to rapid oxidation of NCs such that up to 50% of their volume is transformed into PbO, SeO2, or PbSeO3 within 24 h. The oxidation is a thermally activated process, spontaneous at room temperature. The oxidation-induced reduction in the size of the PbSe "core" increases quantum confinement, causing shifts of the PL band and the absorption onset to higher energies. The exposure of NC solutions to air also causes rapid (within minutes) quenching of PL intensity followed by slow (within hours) recovery during which the PL quantum yield can reach values exceeding those observed prior to the air exposure. The short-term PL quenching is attributed to enhanced carrier trapping induced by adsorption of oxygen onto the NC surface, while the PL recovery at longer times is predominantly due to reduction in the efficiency of the "intrinsic" nonradiative interband recombination caused by the increase of the band gap in oxidized NCs. Although the analysis of subnanosecond relaxation dynamics in air-exposed NCs is complicated by a significant enhancement in fast carrier trapping, our picosecond PL measurements suggest that air exposure likely has only a weak effect on Auger recombination and also does not significantly affect the efficiency of carrier multiplication. We also show that the effects of air exposure are partially suppressed in PbSe/CdSe core/shell structures.

Electrical properties of two kinds of sandwich structures (SnO 2 : F/por-TiO 2 /Ti and Si/por-TiO 2 /Pd) are investigated by the methods of I-V, C-V characteristics and DLTS in vapors of water and alcohol. It has been demonstrated that besides the change of the conductivity and of the capacitance of the por-TiO 2 layers one can also use for gas sensing the change of the high frequency capacitance of the MOS type structure, measurement of the current response at relatively low frequencies and the modification of the charge transfer between the Si bulk and states near the por-TiO 2 /Si interface.

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