2015
DOI: 10.15407/ujpe60.02.0170
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Electron Structure and Electric Conductivity of Graphene with a Nitrogen Impurity

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Cited by 2 publications
(6 citation statements)
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“…The trends are clearly that the relative conductance G(c)/G(0), estimated by the ration T(c)/T(0), decreases with increasing concentration with an average slope 0.19 when c is in at.%. This behavior is in agreement with the results of DFT calculations of graphene conductivity performed for higher N concentrations with the Kubo formula [23]. These calculations, in addition, pinpoint the dominant role played by the π electrons in the decrease of conductance with increasing doping.…”
Section: Resultssupporting
confidence: 89%
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“…The trends are clearly that the relative conductance G(c)/G(0), estimated by the ration T(c)/T(0), decreases with increasing concentration with an average slope 0.19 when c is in at.%. This behavior is in agreement with the results of DFT calculations of graphene conductivity performed for higher N concentrations with the Kubo formula [23]. These calculations, in addition, pinpoint the dominant role played by the π electrons in the decrease of conductance with increasing doping.…”
Section: Resultssupporting
confidence: 89%
“…The Kubo-Greenwood formalism is better adapted to two-dimensional graphene then the Landauer-Büttiker approach is, but there is no systematic calculations of the conductance versus dopant concentration, except in Ref. [23] as already mentioned above.…”
Section: Resultsmentioning
confidence: 99%
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“…Graphenes with impurities of aluminium, silicon, phosphorus, and sulphur were studied within the analogous method in work [3], where it was shown, in particular, that graphene with a 3% impurity of phosphorus has a gap 0.67 eV in width. In work [4] with the use of the QUANTUM-ESPRESSO software, the possibilities of the opening of a gap in the energy spectrum of graphene at the introduction of the impurities of boron and nitrogen (the gap width is 0.49 eV), as well as the impurities of atoms of boron and atoms of lithium adsorbed on the surface (the gap width is 0.166 eV), were demonstrated.…”
Section: Introductionmentioning
confidence: 99%