We report on the possibility to detect laser emission of microdisk laser having diameter of 24 μm with an active region based on InGaAs/GaAs quantum well-dots using a waveguide photodiode (100x4000 μm) with a similar active region. A photocurrent of ~ 10 μA was obtained under a continuous-wave laser operation, injection current of 20 mA and a distance between the facets of the microlaser and photodiode of about 100 μm. The photodiode’s sensitivity was estimated to be ~ 9 μA / 10 μW.

Investigation of photovoltaic converters based on a novel type of nanostructures referred to as quantum-well dots (QWD) which represents In0.4Ga0.6As layer with pronounced modulation of composition and thickness was carried out. The energies of the optical transitions in QWD were found to be very close light and heavy hole based transitions in the quantum well of similar composition and thickness. QWD ground state peak was found to be strongly TE polarized (>70%), whereas the short-wavelength peak is nearly unpolarized (<10%).