Arrays of GaN nanowires (NWs) and nanotubes (NTs) have been grown by metalorganic vapor phase epitaxy using a gold–nickel film as the catalyst. The simultaneous formation of both NTs and NWs in one process in the presence of various Au–Ni catalyst compositions is explained. It is established that NTs grow on solid catalyst particles, while NWs grow according to the classical vapor–liquid–solid mechanism. The optoelectronic properties of obtained NTs and NWs have been studied using photo- and cathodoluminescence techniques.

A model of spontaneous formation of the core-shell structure in (In,Ga)As nanowire grown via molecular beam epitaxy without independent radial growth is proposed. Within the framework of the proposed model, the distribution of In across the axis of the nanowire was fitted.