Considered a comparison of experimental and theoretical results is the number of failures at the chip under the influence of heavy charged particles. Comparison of the results showed good agreement.

In the article the questions of modeling of failures of all types from exposure to heavy charged particles in semiconductor structures for integrated circuits, made by deep-submicron technologies. Based on the simulation estimates of the dependence of failure section from the amount of energy of the particles.

An algorithm for evaluation of resistance to single chip events. Calculate the spatial and temporal distribution of the effect of the particles on the chip. The result is a map of VLSI failure as a temporary sequence

The article considers a calculation of the probability of non-failure operation of elements of complex functional blocks in CAD, determined the effectiveness of reserve items.

The article deals with the preparation for the audit and audit enterprise electronics industry with a view to improving the management and organization of production