In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P+-well layer and can be removed by a buried SO2 layer.

By performing first-principles calculations, we demonstrate the electronic structure, the transport properties, and the adsorption effect of A-Z-A graphene nanoribons field effect transistor. It is concluded that the pure A-Z-A GNR-FET has typical bipolar characteristics, and energy gaps will become smaller due to the adsorbed molecule. For the adsorption of H, N2, NO2, H2O, SO2, O2 and NO, A-Z-A GNR-FET remains typical bipolar characteristic, but shows a little difference in transport property after it has adsorbed different types of molecles. For the adsorption of OH, transport property changes totally and does not have a bipolar characteristic any more. These results may contribute to the implementation of gas detector based on GNRs and the design of GNR-FET applied in complex environments.