SmFe 2.2 alloy films were prepared by magnetron sputtering process. High magnetostrictive susceptibility was found under low residual gas pressure and low sputtering gas pressure at reduced substrate temperatures (T s /K)/(T m /K) from 0.30 to 0.37, where T s and T m are substrate temperature and melting point of SmFe 2.2 alloy, respectively. The residual gas pressure dependence of magnetostrictive susceptibility was mainly explained by rate of samarium oxidation. Based on morphological change in Thornton's model, contributions of sputtering gas pressure and substrate temperatures were discussed.

Composite mover device constructed with both positive and negative magnetostrictive thin films on each side surface of copper substrate are prepared by direct current magnetron sputtering process. The magnetic field induced the mover strain (apparent magnetostriction) of composite mover film at 1200 kA/m of magnetic field is 1800 ppm and is two times larger than the sum of magnetostriction values of Fe Pd positive and Fe Sm negative magnetostrictive thin films.

Influences of magnetostriction and magnetostrictive susceptibility of composite mover device of Fe Tb alloy thin film coated with Fe Pd alloy thin films on one side surface of silicon substrate prepared by DC magnetron sputtering process were investigated. The magnetic field induced the bending motion at 1000 kA/m. The magnetostriction and its susceptibility of the device film approximately corresponds to the average of values of Fe Tb and Fe Pd positive magnetostrictive thin films.