Influences of electron beam (EB) irradiation on magnetostriction and its susceptibility of Fe 2.6 Sm alloy thin films have been investigated. The alloy thin film deposited on a (100) plane of a silicon wafer is prepared by using a direct current magnetron sputtering apparatus. The irradiation enhances compressive magnetostriction and its susceptibility. The large magnetostriction of the irradiated Fe 2.6 Sm sample occurs, because the irradiation prevents generating the Fe 3 Sm crystalline with small magnetostriction. On the other hand, the high susceptibility is explained by randomization, induced by EB irradiation, of Fe 2.6 Sm amorphous sample, where the magnetic moment rotates easily.

SmFe 2.2 alloy films were prepared by magnetron sputtering process. High magnetostrictive susceptibility was found under low residual gas pressure and low sputtering gas pressure at reduced substrate temperatures (T s /K)/(T m /K) from 0.30 to 0.37, where T s and T m are substrate temperature and melting point of SmFe 2.2 alloy, respectively. The residual gas pressure dependence of magnetostrictive susceptibility was mainly explained by rate of samarium oxidation. Based on morphological change in Thornton's model, contributions of sputtering gas pressure and substrate temperatures were discussed.

A three layered composite mover device constructed with both hydrogen storage La Ni and compressive magnetostrictive Sm Fe alloy thin films on each side surface of polyimide substrate has been prepared by using a flash vacuum evaporation and a direct current magnetron sputtering, respectively. When the motion strain is about -750 ppm at ±400 kA/m of magnetic field before hydrogenation, it is about -1150 ppm after hydrogenation. The hydrogenation of the La Ni alloy film in the three layered composite mover device enhances the magnetostriction.