Background : In stage II rectal cancer, it has remained controversial whether patients get the benefit from adjuvant treatment after curative resection. The aim of this study is to evaluate the prognostic factors of stage II rectal cancer. Methods : From October 2000 to December 2008, 200 patients with stage II rectal cancer underwent surgery at National Cancer Center. Univariate and multivariate survival analyses were performed to determine the prognostic factors in stage II rectal cancer.Results : In stage II rectal cancer, 5-year overall survival and disease free survival were 89.2% and 89.0%, respectively. For overall survival, there was no significant prognostic factor in multivariable analysis. For diseasefree survival, tumor differentiation and circumferential resection margin were significant prognostic factors in multivariable analysis.Conclusion : Tumor differentiation and circumference resection margin are independent prognostic factors in disease free survival of stage II rectal cancer. Adjuvant treatment may be considered in patients with these factors.

In this study, we report on the novel lithographic patterning method to fabricate organic thin film field effect transistors (OTFTs) based on photo and e-beam lithography with well-known silicon technology. The method is applied to fabricate pentacene-based organic field effect transistors. Owing to their solubility, sub-micron sized patterning of P3HT and PEDOT has been well established via micromolding in capillaries and inkjet printing techniques. Since the thermally deposited pentacene cannot be dissolved in solvents, other approach was done to fabricate pentacene FETs with a very short channel length (∼30 nm), or in-plane orientation of pentacene molecules by using nanometer-scale periodic groove patterns as an alignment layer for high-performance pentacene devices. Here, we introduce Al 2 O 3 film grown via atomic layer deposition method onto pentacene as a passivation layer. Al2O3 passivation layer on OTFTs has some advantages in preventing the penetration of water and oxygen and obtaining the long-term stability of electrical properties. AZ5214 and ma N-2402 were used as a photo and e-beam resist, respectively. A few micrometer sized lithography patterns were transferred by wet and dry etching processes. Finally, we fabricated micron sized pentacene FETs and measured their electrical characteristics.