The heat temperature of a light emitting diode (LED) is investigated with the thermoelectric device (TED). The Peltier effect of the thermoelectric device is used to control the heat radiation and the junction temperature of high-power LEDs. For the typical specific current (350 mA) of high-power (1 W) LEDs, the LED temperature and the p-n junction temperature become 64.5 o C and 79.1 o C, respectively. For 0.1∼0.2 W driving power of TED, the LED temperature and the junction temperature are reduced to be 54.2 o C and 68.9 o C, respectively.As the driving power of the TED increases over 0.2 W, the temperature of LED itself and the junction temperature are increased due to the heat reversed from the heat-sink to LED.As the difference of temperature between LED and the heat-sink is increased, the quantity of reversed heat becomes larger and it results to degrade the cooling capability of TED.

No abstract

No abstract

No abstract

The influence of O 2 -plasma treatment on H 2 post-treated BZO (ZnO:B) thin film using MOCVD (Metal-Organic Chemical Vapor Deposition) are investigated. An O 2 -plasma treatment of the H 2 post-treated BZO thin films resulted in XRD peak of (100), ( 101) and (110). Also, electrical properties resulted in an increase in sheet resistance and work function. The weighted optical transmittance and haze at 300∼1,100 nm of BZO thin films with O 2 -plasma treatment on the H 2 post-treatment show approximately 86% and 15%, respectively.