0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

Grundbacher, R.; Lai, R.; Barsky, M.; Tsai, R.; Gaier, T.; Weinreb, S.; Dawson, Douglas E.; Bautista, J. J.; Davis, J.; Erickson, N. R.; Block, Thomas; Oki, A.K.

doi:10.1109/iciprm.2002.1014466

Cited by 27 publications

(10 citation statements)

References 5 publications

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“…To the authors' knowledge, these SiGe LNAs exhibit record noise performance for any Si-based LNA operating at X-band. In addition, this noise performance is very competitive with InP HEMT devices which have been shown to have a of less than 10 K at X-band [8].…”

Section: Measurement Resultsmentioning

confidence: 73%

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

Thrivikraman

Yuan

Bardin

et al. 2008

IEEE Microw. Wireless Compon. Lett.

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Abstract-We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating temperature. To the authors' knowledge, these SiGe LNAs exhibit the lowest broadband noise of any Si-based LNA reported to date.Index Terms-Heterojunction bipolar transistor (HBT), low noise amplifiers (LNAs), silicon-germanium (SiGe).

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Section: Measurement Resultsmentioning

confidence: 73%

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

Thrivikraman

Yuan

Bardin

et al. 2008

IEEE Microw. Wireless Compon. Lett.

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“…High performance InP HEMTs are attractive devices for applications such as radiometric-imaging systems using atmospheric windows around 140 GHz and 220 GHz, remote atmospheric sensing, weapon detection, and 140 GHz MMICs for next generation automobile collision avoidance systems [1][2][3][4]. The advanced performance and high bandwidth of InP HEMTs is attributed to the superior electron transport properties of the InP-based material system.…”

Section: Introductionmentioning

confidence: 99%

High performance InP HEMT technology with multiple interconnect layers for advanced RF and mixed signal circuits

Shinohara

Griffith

et al. 2009

2009 IEEE International Conference on Indium Phosphide &Amp; Related Materials

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We report the development of high performance InP high electron mobility transistors (HEMTs) supported with three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. Depletion and enhancement mode devices with 35 nm gate-lengths are available with fT / fmax of 536/307 GHz and fT / fmax of 550/346 GHz, respectively. The process shows excellent device uniformity, yield, and reliability. The technology was used to demonstrate broadband feedbacklinearized amplifiers with 20dB S 21 gain and an OIP3 of 37 dBm at 2 GHz operation, where P DC is only 313mW.

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“…10 and 11. The values, at 15 K, for three different cases of HBT size and , are also tabulated in Table II. For comparison with these results, 0.1-m InP HEMT transistors previously measured at 15 K [8], [9] have been included. The HEMT noise at low microwave frequencies depends upon the gate leakage current ranging from 0.1 A (denoted as 0 A in Fig.…”

Section: Noise Versus Frequency Modelmentioning

confidence: 99%

Design of Cryogenic SiGe Low-Noise Amplifiers

Weinreb

Bardin

Mani

2007

IEEE Trans. Microwave Theory Techn.

110

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Abstract-This paper describes a method for designing cryogenic silicon-germanium (SiGe) transistor low-noise amplifiers and reports record microwave noise temperature, i.e., 2 K, measured at the module connector interface with a 50-generator. A theory for the relevant noise sources in the transistor is derived from first principles to give the minimum possible noise temperature and optimum generator impedance in terms of dc measured current gain and transconductance. These measured dc quantities are then reported for an IBM SiGe BiCMOS-8HP transistor at temperatures from 295 to 15 K. The measured and modeled noise and gain for both a single-and two-transistor cascode amplifier in the 0.2-3-GHz range are then presented. The noise model is then combined with the transistor equivalent-circuit elements in a circuit simulator and the noise in the frequency range up to 20 GHz is compared with that of a typical InP HEMT.

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0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

Cited by 27 publications

References 5 publications

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

High performance InP HEMT technology with multiple interconnect layers for advanced RF and mixed signal circuits

Design of Cryogenic SiGe Low-Noise Amplifiers

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