0.13 $\mu$m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

Avenier, G.; Diop, Malick; Chevalier, P.; Troillard, G.; Loubet, N.; Bouvier, J.; Depoyan, L.; Derrier, N.; Buczko, M.; Leyris, C.; Boret, S.; Montusclat, S.; Margain, A.; Pruvost, Sébastien; Nicolson, S.T.; Yau, K.H.K.; Revil, N.; Gloria, D.; Dutartre, D.; Voinigescu, S.P.; Chantre, A.

doi:10.1109/jssc.2009.2024102

Cited by 130 publications

(61 citation statements)

References 16 publications

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“…The circuit was fabricated in a SiGe BiCMOS process with a dedicated mm-wave back-end, 130-nm MOSFETs, and HBT f T and f MAX of 230 GHz and 280 GHz, respectively [2]. The backend features 6 copper layers with the top two being 3μm thick.…”

Section: Resultsmentioning

confidence: 99%

A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters

Laskin

Chevalier

Sautreuil

et al. 2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz and 4 Gb/s through the air using a single-chip silicon transceiver at 140 GHz. The transceiver, which consists of a 140-GHz pushpush VCO with a static divide-by-64 chain, a 140-GHz amplitude modulator, a 140-GHz LO amplifier, a fundamental frequency mixer, a 140-GHz LNA, and a variable gain IF amplifier, has a downconversion gain of 30 dB and a noise figure of 12.3 dB. It is fabricated in a 130-nm SiGe BiCMOS technology, occupies an area of 1.44 mm 2 , and consumes 1.5 W.

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Section: Resultsmentioning

confidence: 99%

A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters

Laskin

Chevalier

Sautreuil

et al. 2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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“…This subsection reports a performance analysis of interstacked transformer designed in a mm-wave BiCMOS technology [8]. As already shown in [7], the exploitation of the interstacked configuration allows improving the performance of integrated transformers at mm-wave frequencies, especially in terms of magnetic coupling, insertion loss, and transformer characteristic resistance [9].…”

Section: Performance Analysismentioning

confidence: 89%

“…At small inductance values (less than 200 pH), interstacked transformers can achieve higher k compared with conventional stacked coils, thanks to the exploitation of the interleaved coupling. The improvement of magnetic coupling becomes significant in state-of-theart mm-wave optimized BiCMOS processes [8], which adopt thick oxides between upper metal layers. With these technologies, the advantage in terms of k of stacked coils is highly reduced and the interstacked structure can boost the overall magnetic coupling, especially when close intermetal spacing (s) is used.…”

Section: Transformer Descriptionmentioning

confidence: 99%

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Analysis and modeling of interstacked transformers for mm-wave applications

Ragonese

Sapone

Giammello

et al. 2011

Analog Integr Circ Sig Process

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The analysis and modeling of monolithic interstacked transformers for mm-wave applications is addressed. The performance advantages of the interstacked structure are demonstrated by using the most important figures of merit for integrated transformers and a physicbased scalable lumped model is proposed. The model components are calculated with closed-form expressions that make use of geometrical and technological parameters. The accuracy of the proposed model is demonstrated by comparison with electromagnetic data in a wide frequency range. Maximum errors are below 5, 7.5, and 2% for magnetic coupling factor, quality factor, and self-resonance frequency, respectively. High accuracy is also achieved in the modeling of S-parameters up to the self-resonance frequency.

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“…The working principle of HBTs and the review work are given in detail in [1][2][3][4][5]. Several works have been reported on BiCMOS technology on bulk substrate that can be found from the literature [6][7][8]. Although BiCMOS technology on bulk substrate offers devices with promising performance, the process complexity, isolation among devices and power consumption have been the main issues in deep submicron lithography nodes.…”

Section: Introductionmentioning

confidence: 99%

Epilayer Optimization of NPN SiGe HBT with n+ Buried Layer Compatible With Fully Depleted SOI CMOS Technology

Misra

Qureshi²

2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, the epi layer of npn SOI HBT with n+ buried layer has been studied through Sentaurus process and device simulator. The doping value of the deposited epi layer has been varied for the npn HBT to achieve improved f t BV CEO product (397 GHzV). As the BV CEO value is higher for low value of epi layer doping, higher supply voltage can be used to increase the f t value of the HBT. At 1.8 V V CE , the f t BV CEO product of HBT is 465.5 GHzV. Further, the film thickness of the epi layer of the SOI HBT has been scaled for better performance (426.8 GHzV f t BV CEO product at 1.2 V V CE ). The addition of this HBT module to fully depleted SOI CMOS technology would provide better solution for realizing wireless circuits and systems for 60 GHz short range communication and 77 GHz automotive radar applications. This SOI HBT together with SOI CMOS has potential for future high performance SOI BiCMOS technology.

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0.13 $\mu$m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

Cited by 130 publications

References 16 publications

A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters

A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters

Analysis and modeling of interstacked transformers for mm-wave applications

Epilayer Optimization of NPN SiGe HBT with n+ Buried Layer Compatible With Fully Depleted SOI CMOS Technology

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