1.2kV class SiC MOSFETs with improved performance over wide operating temperature

Losee, Peter A.; Bolotnikov, Alexander; Yu, Libing; Beaupre, Richard; Stum, Zachary; Kennerly, Stacey; Dunne, Greg; Yang, Sui; Kretchmer, J.; Johnson, A P; Arthur, Steve; Saia, R.; McMahon, James; Lilienfeld, David; Esler, David; Gowda, Arun; Hartig, M.; Sandvik, Peter; Olson, R. J.; Zhu, Xingguang; Stolkarts, V.; Stevanovic, Ljubisa

doi:10.1109/ispsd.2014.6856035

Cited by 21 publications

(9 citation statements)

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“…However, the wider bandgap of SiC makes it highly unlikely for the activation of the parasitic BJT element during typical UIS events (i.e., with typical values of switched currents and ensuing temperature evolution). Previous publications have shown that commercially available SiC MOSFETs exhibit significant intrinsic avalanche ruggedness and could dissipate E AV above 1 J, depending on the test conditions [5][6][7]13,14]. Even though different studies have presented experimental avalanche robustness, the understanding of its failure mechanism stills remains somewhat unclear and lacking.…”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

et al. 2017

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This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (E AV ) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown.

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Section: Introductionmentioning

confidence: 99%

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

et al. 2017

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“…The recent advances at GE and elsewhere have cleared the path for widespread adoption of SiC devices in power conversion applications. Such achievements include: Schottky diode product introductions by Infineon and Cree [4,5] validated commercial feasibility of material; qualification testing of GE MOSFETs [6] in accordance with the most stringent automotive standard AEC-Q101 [7] has shown that the devices meet survivability and parametric stability requirements at operating temperature of 200 o C. Additionally, the risk of bipolar degradation of SiC MOSFET body diode was mitigated through material quality improvement [8,9] or by limiting device body diode SOA to high frequencies and short forward conduction durations [10]. It is, therefore, expected that MOSFET will become the SiC device of choice for high power industrial applications by offering superior performance and reliable, cost competitive system solutions.…”

Section: Introductionmentioning

confidence: 99%

Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications

Bolotnikov

Losee

Permuy

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper presents the latest 1.2kV-2.2kV SiC MOSFETs designed to maximize SiC device benefits for highpower, medium voltage power conversion applications. 1.2kV, 1.7kV and 2.2kV devices with die size of 4.5mm x 4.5mm were fabricated, exhibiting room temperature on-resistances of 34mOhm, 39mOhm and 41mOhm, respectively. The ability to safely withstand single-pulse avalanche energies of over 17J/cm 2 is demonstrated. Next, the 1.7kV SiC MOSFETs were used to fabricate half-bridge power modules. The module typical onresistance was 7mOhm at Tj=25 o C and 11mOhm at 150 o C. The module exhibits 9mJ turn-on and 14mJ turn-off losses at Vds=900V, Id=400A. Validation of GE's SiC MOSFET performance advantages was done through continuous buckboost operation with three 1.7kV modules per phase leg exhibiting 99.4% efficiency. Device ruggedness and tolerance to terrestrial cosmic radiation was evaluated. Experimental results show that higher voltage devices (2.2kV and 3.3kV) are more susceptible to cosmic radiation, requiring up to 45% derating in order to achieve module failure rate of 100 FIT, while 1.2kV MOSFETs require only 25% derating to deliver similar FIT rate. Finally, the feasibility of medium voltage power conversion based on series connected 1.2kV SiC MOSFETs with body diode is demonstrated.

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“…Discrete SiC-MOSFETs have been developed and commercialized by many companies for intermediate-voltage classes from 600 V to 2 kV. [17][18][19][20][21][22] On the other hand, high-voltage (>3 kV) SiC-MOSFETs have so far been under development by several research groups. [23][24][25] In the field of handling high-voltage and high-frequency systems such as high-power trains, SiC-MOSFETs show potential for low switching losses while exhibiting conduction losses comparable to those of conventional Si-IGBTs if the cell structural design is optimized.…”

Section: Introductionmentioning

confidence: 99%

3.3 kV/1500 A power modules for the world’s first all-SiC traction inverter

Hamada

Hino

Miura

et al. 2015

Jpn. J. Appl. Phys.

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We have successfully developed 4H-SiC devices including metal–oxide–semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) with a rated voltage of 3.3 kV. The conduction loss of the SiC-MOSFET was reduced to as low as that of the Si-insulated gate bipolar transistor (IGBT) by the n-type doping of the junction field-effect transistor region (JFET doping). The JFET doping technique is effective in reducing the temperature coefficient of resistance in the JFET region, leading to the decreased on-resistance of the SiC-MOSFET at high temperatures. These devices have been applied to 3.3 kV/1500 A modules for the world’s first all-SiC traction inverter. The switching loss of the new traction inverter system is approximately 55% less than that of a conventional inverter system incorporating Si modules.

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1.2kV class SiC MOSFETs with improved performance over wide operating temperature

Cited by 21 publications

References 1 publication

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications

3.3 kV/1500 A power modules for the world’s first all-SiC traction inverter

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1.2kV class SiC MOSFETs with improved performance over wide operating temperature

Cited by 21 publications

References 1 publication

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

Overview of 1.2kV &#x2013; 2.2kV SiC MOSFETs targeted for industrial power conversion applications

3.3 kV/1500 A power modules for the world’s first all-SiC traction inverter

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Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications