1.55 /spl mu/m Mach-Zehnder Modulators on InP for Optical 40/80 Gbit/s Transmission Networks

Abstract

We demonstrate excellent 40 Gbit/s operation of a packaged InP Mach-Zehnder-Modulator with a low rms jitter of 730 fs. A modulator with 63 GHz on-chip bandwidth is shown as a step towards 80 Gbit/s transmission.

100 Gb/s and 2 V V π InP Mach‐Zehnder modulator with an n‐i‐p‐n heterostructure

“…The CL‐TWE is then plated on bisbenzocyclobutene. The electrode configuration is based on a conventional series push–pull drive (single‐ended 50 Ω design) [1–4]. The total travelling‐wave electrode is 3 mm long.…”

“…In general, there is trade‐off between electro‐optic bandwidth (EO‐BW) and V π because the electro‐optic (EO) interaction depends strongly on electrode length which also affects the EO‐BW. Thus, previously reported ultra‐high speed modulators tend to shorten the electrode length, and an increase in V π is inevitable [1, 2]. Recently, broadband InP modulators with a low V π (<2 V) were demonstrated by utilising a low‐loss electrical line such as a capacitive‐loaded travelling‐wave electrode (CL‐TWE) [2–5].…”

Microwave Photonics – an Introductory Overview

“…Nevertheless, some impressive results have been achieved, including demonstrations of low drive voltage (0.45 V for a GaAs Mach-Zehnder modulator for an estimated bandwidth of 50 GHz [45]) and demonstrations of 80 Gb/s modulation (for an InP modulator with capacitively loaded electrodes [46]). Semiconductor-based modulators are also more compact, but the linear electro-optic (Pockels) effect is weaker than that in lithium niobate and there tends to be a poor overlap between the optical mode and the applied electric field.…”

60GHz-Band Photonic-Integrated Array-Antenna and Module for Radio-over-Fiber-Based Beam Forming

“…In the future, we may be able to use much better modulator, where the 3-dB bandwidth will be as large as 60 GHz [18]. In that case, we can improve the frequency response by 8 dB.…”