Electrical bandwidth of 60 GHz and optical bandwidth exceeding 35 GHz, limited by the photodetector response, are demonstrated for an electrooptically-modulated VCSEL. The maximum single mode power approaches 3mW continuous wave. Modulation voltage efficiency factor is 3-10 dB/V.

A dual-laser tuneable source based on a polymer integration platform is proposed as a low-cost light source for WDM-PON. A tunability of 40 nm along the C-band using a maximum electrical power of 82 mW was achieved. Direct modulation at 2.5 Gb/s through 20 km standard single-mode fibre and a 100 GHz-AWG has been successfully demonstrated

We demonstrate excellent 40 Gbit/s operation of a packaged InP Mach-Zehnder-Modulator with a low rms jitter of 730 fs. A modulator with 63 GHz on-chip bandwidth is shown as a step towards 80 Gbit/s transmission.

A new approach for aligning wrinkles in thin viscoelastic polymethylmethacrylate films is established by sandwiching them between ferromagnetic layers. Experiments prove that a contribution from an engineered anisotropic 1D periodic magnetic stray field pattern can be decisive for the alignment of otherwise randomly oriented wrinkles at commensurate periods of the magnetic template pattern and the wrinkles. Alternatively, random wrinkling is observed under similar conditions, but when periodic magnetic stray fields are missing or not commensurate with the wrinkle wavelength. The possibility to stabilize two distinct types of wrinkling patterns in the same material system paves the way toward mechanically reconfigurable functional elements, enabling exciting possibilities for stretchable electronics, magnetic field sensors, and tuneable gratings for optoelectronics and photonics.

Electro-absorption modulated 10G and 25G DFB lasers (EML) are key components in transmission systems for long reach (up to 10 km) and extended reach (up to 80 km) applications. The next generation Ethernet will most likely be 400 Gb/s which will require components with even higher bandwidth. Commercially available EMLs are regarded as high-cost components due to their separate epitaxial butt-coupling growth process to separately optimize the DFB laser and the electro-absorption modulator (EAM). Alternatively the selective area growth (SAG) technique is used to achieve different MQW bandgaps in the DFB and EAM section of an EML. However for a lot of applications an emission wavelength within a narrow wavelength window is required enforcing a temperature controlled operation. All these applications can be covered with the developed EML devices that use a single InGaAlAs MQW waveguide for both the DFB and the EAM enabling a low-cost fabrication process similar to a conventional DFB laser diode. It will be shown that such devices can be used for 25Gb/s and 40Gb/s applications with excellent performance. By an additional monolithic integration of an impedance matching circuit the module fabrication costs can be reduced but also the modulation bandwidth of the devices can be further enhanced. Up to 70Gb/s modulation with excellent eye openings can be achieved. This novel approach opens the possibility for 100Gb/s NRZ EMLs and thus 4x100Gb/s NRZ EML-based transmitters in future. Also even higher bitrates seem feasible using more complex modulation formats such as e.g. DMT and PAM