1.58-μm lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers

Liu, G.T.; Stintz, A.; Pease, E.A.; Newell, T.C.; Malloy, K.J.; Lester, L. F.

doi:10.1109/68.817428

Cited by 33 publications

(11 citation statements)

References 15 publications

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“…In this work, we refer to the experimental results obtained by Selmic et al 1 and Liu et al 14 The simulation results suggest that the original proposal of using compensated-strained barriers and n-type AlInAs hole stopper layer to improve the laser performance, provided upon abstract submission, is not feasible. Therefore, the newly proposed improved laser structure, with compressive-strained wells and a p-type AlInAs electron stopper layer, will be discussed in detail in this full manuscript.…”

Section: And the Other Ismentioning

confidence: 89%

“…Threshold current as a function of operating temperature of the device proposed by Selmic et al obtained from this work.In order to discuss the properties of the 1.55-µm laser diode, a new active region structure (structure A) proposed by Liu et al14 is applied to replace the original active region proposed by Selmic et al This new active region consists of four 10-nm Al 0.08 Ga 0.25 In 0.67 As wells with 1% compressive strain and three Al 0.192 Ga 0.282 In 0.526 As barriers. The materials of other layers in structure A are close to those proposed by Selmic et al More information about the devices fabricated by Selmic et al and Liu et al can be found in Refs.…”

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confidence: 99%

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Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers

et al. 2006

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Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-µm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2% compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×10 23 m −3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74% at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K~350 K, 300 K~330 K, and 330 K~350 K, respectively.

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Section: And the Other Ismentioning

confidence: 89%

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confidence: 99%

Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers

et al. 2006

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“…Furthermore, InAlGaAs-based active regions are preferred for their high temperature performance [10]. Previous work on long-wavelength DAAR with short period superlattices and SMS has shown improved uniformity and compositional accuracy using a variety of binary and ternary superlattice combinations, such as binary-binary SMS [11,12], lattice-matched ternary (LMT)-strained ternary superlattices [13], and binary-LMT SMS [14,15]. These techniques have demonstrated edge emitting lasers with low threshold current densities.…”

Section: Introductionmentioning

confidence: 97%

>100% output differential efficiency 1.55-μm VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP

Wang

Koda

Huntington

et al. 2005

Journal of Crystal Growth

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“…This approach does not require additional source cells or rigorous change of cell temperature during growth interruption [7,8]. Using InGaAlAs digital alloy, lattice matched 1.58 mm MQW laser diode [9], strained 1.3 mm MQW lasers [10], and broadband (1.3-1.9 mm) emission triple-quantum-well light-emitting diodes [11] have been successfully fabricated. However, investigation of an InGaAs/InGaAlAs (tensile strained well/lattice matched barrier) system for 1.3 mm emission wavelength is yet to be reported.…”

Section: Introductionmentioning

confidence: 99%