&gt;100% output differential efficiency 1.55-μm VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP

Wang, C.S.; Koda, Rintaro; Huntington, Andrew S.; Gossard, A. C.; Coldren, L.A.

doi:10.1016/j.jcrysgro.2004.12.139

Cited by 6 publications

(5 citation statements)

References 19 publications

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“…The implementation of the short period superlattices (e.g. DA) active region has allowed the access of band gap narrowing effect for applications requiring emission wavelength beyond 1235 nm 54 – 59 . Specifically, both of GaAsN/InGaAs superlattices or InGaAs/InAlAs superlattices were reported to realize DA based active regions with compositions determined by the periodicity and duty cycles of the individual sub-layers.…”

Section: Concepts and Modeling – Digital Alloymentioning

confidence: 99%

“…Specifically, both of GaAsN/InGaAs superlattices or InGaAs/InAlAs superlattices were reported to realize DA based active regions with compositions determined by the periodicity and duty cycles of the individual sub-layers. These prior works have resulted in lasing characteristics of these DA active regions in InGaAs/InAlAs DA active region for high performance telecommunication lasers 54 – 56 . In an analogous manner, the concept of DA can also be applied based on the III-Nitride short period superlattice structure 38 – 48 .…”

Section: Concepts and Modeling – Digital Alloymentioning

confidence: 99%

See 1 more Smart Citation

III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures

Sun

Tan

Tansu

2017

Sci Rep

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The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are expected to have comparable optoelectronic properties as the conventional III-Nitride alloys. Here we carried out numerical studies on the InGaN DA showing the tunable optoelectronic properties of the III-Nitride DA. Our study shows that the energy gap of the InGaN DA can be tuned from ~0.63 eV up to ~2.4 eV, where the thicknesses and the thickness ratio of each GaN and InN ultra-thin binary layers within the DA structure are the key factors for tuning bandgap. Correspondingly, the absorption spectra of the InGaN DA yield broad wavelength tunability which is comparable to that of bulk InGaN ternary alloy. In addition, our investigation also reveals that the electron-hole wavefunction overlaps are remarkably large in the InGaN DA structure despite the existence of strain effect and build-in polarization field. Our findings point out the potential of III-Nitride DA as an artificially engineered nanostructure for optoelectronic device applications.

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Section: Concepts and Modeling – Digital Alloymentioning

confidence: 99%

Section: Concepts and Modeling – Digital Alloymentioning

confidence: 99%

III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures

Sun

Tan

Tansu

2017

Sci Rep

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“…Therefore, the reverse‐biased tunnel junction can be a good current path from an n‐layer to a p‐layer, providing greater flexibilities in device designs for current injection. There are some optoelectronic devices utilizing the reverse‐biased tunnel junctions, such as multi‐junction solar cells and vertical cavity surface‐emitting lasers .…”

Section: Introductionmentioning

confidence: 99%

GaInN‐based tunnel junctions with high InN mole fractions grown by MOVPE

Minamikawa

Ino

Kawai

et al. 2015

Physica Status Solidi (b)

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We demonstrated low‐resistive GaInN‐based tunnel junctions with high In mole fractions (over 0.35) grown by metalorganic vapor phase epitaxy (MOVPE). A 2 nm heavily Mg‐doped Ga0.6In0.4N/15 nm heavily Si‐doped GaN tunnel junction was grown on a standard‐sized (310 × 310 µm2) LED. The tunnel junction showed 0.06 V drop at 20 mA (26 A/cm2), corresponding to 4 × 10−3 Ωcm2 as the resistivity. This result indicates that MOVPE‐grown tunnel junctions showed an almost comparable resistivity as conventional p‐contact. We also found that the tunnel junction resistivity is decreased to 4 × 10−4 Ω cm2 with an increase of current density up to 5 kA/cm2. A tunneling through midgap states was suggested from forward‐biased I–V characteristics of transmission line model test structures with the tunnel junctions.

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“…Mature III-V material systems such as III-arsenides/phosphide have efficient tunnel junctions [3] that may be used to electrically connect active regions in lasers. In such a light-emitting device with multiple active regions, the internal quantum efficiency may exceed 100% since each carrier is recycled at the tunnel junction and can take place in multiple recombination events [4]. The III-nitride system lacks such a mature tunnel junction, largely due to the large band-gap of the materials of interest and lack of controllable mid-gap states that enhance reverse-bias tunneling.…”

mentioning

confidence: 99%

Multi‐color light emitting diode using polarization‐induced tunnel junctions

Grundmann

Mishra

2007

Phys. Status Solidi (c)

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A multi-color light emitting diode (LED) using two distinct active regions connected via a tunnel junction was grown by rf-plasma-assisted molecular beam epitaxy. The LED is contacted through n-type layers, one of which provides efficient contact to a p-type layer via a second tunnel junction. The tunnel junctions used in the structure use the high polarization fields found in the III-nitrides material system to narrow the depletion width of the junction. Two peaks at 405 nm and 490 nm are observed in the electroluminescence spectrum of the LED, and current-voltage characteristics indicate a turn-on voltage of roughly 7.5 V and dynamic series resistance of 19 ª at 80 mA for a ¿¼¼ µm square device.

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>100% output differential efficiency 1.55-μm VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP

Cited by 6 publications

References 19 publications

III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures

III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures

GaInN‐based tunnel junctions with high InN mole fractions grown by MOVPE

Multi‐color light emitting diode using polarization‐induced tunnel junctions

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