1.6 A GaN Schottky rectifiers on bulk GaN substrates

High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

“…Recent experimental study has shown that a higher thermal conductivity of 2.3 W/cm K was measured on a high quality, low dislocation density bulk GaN substrate [24]. Furthermore, the bulk GaN substrates allow fabrication of vertical geometry device with full backside ohmic contact, which will essentially enable much higher current conduction than lateral rectifiers fabricated on insulating substrates [25]. Fig.…”

Edge termination design and simulation for bulk GaN rectifiers

“…[1][2][3][4][5] These would have application in pulsed power for avionics and electric ships, in solid-state drivers for heavy electric motors and in advanced power management and control electronics. [8][9][10] These have shown excellent forward current characteristics, with total currents Ͼ1.7 A for 7-mm-diam devices and low forward turn-on voltages (V F ϳ1.8 V). While excellent reverse blocking voltages (V B ) have been achieved in lateral GaN rectifiers (V B up to ϳ9.7 kV͒, these devices have limited utility because of their low on-state current.…”

Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing

“…Schottky rectifiers are a key element of inverter modules because of their high switching speeds and low switching losses, which are important for improving the efficiency of inductive motor controllers and power supplies. In particular, GaN power diodes needed for inverter modules exhibit on-state resistances several orders of magnitude lower than comparable Si devices along with much larger electric field breakdown strengths [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. One of the remaining critical requirements for commercialization is the need for improved Schottky contacts on n-type GaN and AlGaN.…”