1-D simulation of a novel nonvolatile resistive random access memory device

Meyer, René; Kohlstedt, H.

doi:10.1109/tuffc.2006.182

Cited by 6 publications

(6 citation statements)

References 24 publications

(35 reference statements)

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“…The device resistance shows two ͑low and high͒ states, depending on the polarization direction, which represent the logical "0" and "1" with a nondestructive readout. 111 The appropriate doping and the kind of current transport through the device remain unsolved. Recent simulations show that polar media exhibit electrondipole scattering and lead to very low mobilities.…”

Section: Ferroresistive Storagementioning

confidence: 99%

Ferroelectric thin films: Review of materials, properties, and applications

Setter

Damjanović²,

Eng³

et al. 2006

Journal of Applied Physics

1,620

1,000

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An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems' applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure ͑domains, in particular͒, and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems' applications, and permittivity and loss in ferroelectric films-important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures.

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Section: Ferroresistive Storagementioning

confidence: 99%

Ferroelectric thin films: Review of materials, properties, and applications

Setter

Damjanović²,

Eng³

et al. 2006

Journal of Applied Physics

1,620

1,000

View full text Add to dashboard Cite

show abstract

“…However, we would like to point out that our results do not necessarily mean that a ferroresistive switch could not exist at all. 29,34,35 We demonstrate that I-V curves alone are not sufficient to understand the switching mechanism dominating the I-V characteristics.…”

Section: Methods To Distinguish Ferroelectric From Nonferroelectric Ormentioning

confidence: 89%

Method to distinguish ferroelectric from nonferroelectric origin in case of resistive switching in ferroelectric capacitors

Kohlstedt

Petraru

Szot

et al. 2008

Applied Physics Letters

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We present investigations on the resistive switching effect in SrRuO3∕PbZr0.2Ti0.8O3∕Pt ferroelectric capacitors. Using a conductive atomic force microscope, the out-of-plane piezoelectric response and the capacitive and resistive current were simultaneously measured as a function of applied bias voltage. We observed two independent switching phenomena, one attributed to the ferroelectric switching process and the other to resistive switching.We show that I-V curves alone are not sufficient in ferroelectric materials to clarify the underlying switching mechanism and must be used with sufficient caution.

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“…Ferroelectric-resistive switching in a metal/ferroelectric/ metal (MFM) junction, another class of bipolar switching, is believed to be a result of the change of a ferroelectric's conduction band profile by the ferroelectric polarization reversal [146][147][148]216]. The alternation of carrier-depletion width in ferroelectric PTO by ferroelectric switching is the first model attempting to explain ferroelectric-resistive switching [39].…”

Section: 44mentioning

confidence: 99%

Emerging memories: resistive switching mechanisms and current status

Jeong¹,

Thomas²,

Katiyar³

et al. 2012

Rep. Prog. Phys.

953

648

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The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

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1-D simulation of a novel nonvolatile resistive random access memory device

Cited by 6 publications

References 24 publications

Ferroelectric thin films: Review of materials, properties, and applications

Ferroelectric thin films: Review of materials, properties, and applications

Method to distinguish ferroelectric from nonferroelectric origin in case of resistive switching in ferroelectric capacitors

Emerging memories: resistive switching mechanisms and current status

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