Ferroelectric thin films: Review of materials, properties, and applications

Setter, N.; Damjanović, Dragan; Eng, Lukas M.; Fox, Glen R.; Gevorgian, Spartak; Hong, Seungbum; Kingon, A. I.; Kohlstedt, H.; Park, N. Y.; Stephenson, G. B.; Stolitchnov, I.; Taganstev, A. K.; Taylor, D. V.; Yamada, Tomoaki; Streiffer, S. K.

doi:10.1063/1.2336999

Cited by 1,620 publications

(1,056 citation statements)

References 417 publications

(390 reference statements)

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“…The thickness of the coherent films is much larger than the critical thickness for strain relaxation predicted by the MatthewsBlakeslee model and suggests better agreement with the People and Bean model. The temperature evolution of the a-lattice and c-lattice parameter of the ferroelectric films agrees well with the model of Pertsev et al 7 The present work clarifies that the 20% of a domains predicted by the model of Koukhar et al 9 for PTO on ͑001͒-STO, which is supported by data points and widely adopted in literature 2,3 for PTO films thicker than 10 nm, is not necessarily the equilibrium solution. This solution is applicable if the initial PTO film is relaxed during growth by misfit dislocations into the cubic paraelectric phase.…”

Section: Discussionsupporting

confidence: 79%

“…2,3,6,[8][9][10] Domain structures arise when this phase is cooled through T c . In such a case the models of Koukhar et al 9 and Li et al 10 can be applied.…”

Section: Introductionmentioning

confidence: 99%

“…1 In particular for epitaxial ferroelectrics, the misfit strain largely affects the behavior and properties of the thin films. [2][3][4][5] Several theoretical models were developed, predicting the effect of substrate constraints on domain structures in ferroelectric films. [6][7][8][9][10][11] Clearly, in order to apply these models a detailed understanding of the precise boundary conditions is required.…”

Section: Introductionmentioning

confidence: 99%

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Monodomain strained ferroelectricPbTiO3thin films: Phase transition and critical thickness study

Venkatesan

Vlooswijk²,

Kooi

et al. 2008

Phys. Rev. B

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This work demonstrates that instead of paraelectric PbTiO 3 , completely c-oriented ferroelectric PbTiO 3 thin films were directly grown on ͑001͒-SrTiO 3 substrates by pulsed-laser deposition with thickness up to 340 nm at a temperature well above the Curie temperature of bulk PbTiO 3 . The influence of laser-pulse frequency, substrate-surface termination on growth, and functional properties were studied using x-ray diffraction, transmission electron microscopy, and piezoresponse force microscopy. At low growth rates ͑frequency Ͻ5 Hz͒ the films were always monodomain. However, at higher growth rates ͑frequency Ͼ8 Hz͒ a domains were formed for film thickness above 20-100 nm. Due to coherency strains the Curie temperature ͑T c ͒ of the monodomain films was increased approximately by 350°C with respect to the T c of bulk PbTiO 3 even for 280-nm-thick films. Nonetheless, up to now this type of growth mode has been considered unlikely to occur since the Matthews-Blakeslee ͑MB͒ model already predicts strain relaxation for films having a thickness of only ϳ10 nm. However, the present work disputes the applicability of the MB model. It clarifies the physical reasons for the large increase in T c for thick films, and it is shown that the experimental results are in good agreement with the predictions based on the monodomain model of Pertsev et al. ͓Phys. Rev. Lett. 80, 1988

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Section: Discussionsupporting

confidence: 79%

“…2,3,6,[8][9][10] Domain structures arise when this phase is cooled through T c . In such a case the models of Koukhar et al 9 and Li et al 10 can be applied.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Monodomain strained ferroelectricPbTiO3thin films: Phase transition and critical thickness study

Venkatesan

Vlooswijk²,

Kooi

et al. 2008

Phys. Rev. B

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“…[18][19][20][21]. These phenomena are often associated with the presence of nanoscale textures of domains or nanoscale phase separation [22][23][24].…”

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confidence: 99%

Substrate Clamping Effects on Irreversible Domain Wall Dynamics in Lead Zirconate Titanate Thin Films

et al. 2012

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The role of long-range strain interactions on domain wall dynamics is explored through macroscopic and local measurements of nonlinear behavior in mechanically clamped and released polycrystalline lead zirconate-titanate (PZT) films. Released films show a dramatic change in the global dielectric nonlinearity and its frequency dependence as a function of mechanical clamping. Furthermore, we observe a transition from strong clustering of the nonlinear response for the clamped case to almost uniform nonlinearity for the released film. This behavior is ascribed to increased mobility of domain walls. These results suggest the dominant role of collective strain interactions mediated by the local and global mechanical boundary conditions on the domain wall dynamics. The work presented in this Letter demonstrates that measurements on clamped films may considerably underestimate the piezoelectric coefficients and coupling constants of released structures used in microelectromechanical systems, energy harvesting systems, and microrobots. Strain in epitaxial oxide films has become a universally recognized method for tuning materials properties [1][2][3], enabling novel couplings between magnetic, lattice, and strain behaviors [4][5][6], stabilizing new phases [7] or domain morphologies [8]. Systematic studies of a material's response to strain enable exploration of the fundamental mechanisms responsible for, e.g., the ferroelectric instability [9][10][11][12].While strain effects on intrinsic properties [9,12] and domain morphologies [13,14] are readily amenable to theoretical and experimental studies, their role on local and emergent properties [15] in disordered materials, including polycrystalline ferroelectric films and relaxors, remains virtually unexplored [16,17], Indeed, many of these materials exhibit unique physical properties including giant electromechanical coupling coefficients, broad dispersions of dielectric permittivity, etc. [18][19][20][21]. These phenomena are often associated with the presence of nanoscale textures of domains or nanoscale phase separation [22][23][24]. In all these materials, the dominant order parameter is either strain (ferroelastics) or is strongly coupled to strain (relaxors, morphotropic systems), suggesting the significant role of frustrated or random strain interactions [25][26][27]. Correspondingly, tuning mechanical boundary conditions can significantly affect emergent behaviors in disordered ferroics and provide insight into corresponding coupling mechanisms.Here, we aim to explore domain wall dynamics as reflected in ferroelectric nonlinearities in model PbZr 0:52 Ti 0:48 O 3 thin films. In polycrystalline lead zirconate-titanate (PZT) ceramics, domain wall motion may contribute more than 50% of the dielectric and piezoelectric properties at room temperature [23,28]. However, in thin films these extrinsic contributions to the piezoelectric response can be severely limited by several factors, including substrate clamping [29]. Recent spatially resolved studies of piezoelectri...

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“…The ferroelectric layer can in some cases be partly interfaced with an interface layer with a low relative permittivity, e.g., due to material diffusion through the electrodes. The effect of the passive interface layer on the device properties of a parallel plate capacitor near a single metal-ferroelectric interface is described in [23,91] as…”

Section: Chapter 3 Ferroelectric Materials and Propertiesmentioning

confidence: 99%

Thin fim barium strontium titanate capacitors for tunable RF frond-end applications

Tiggelman¹

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Ferroelectric thin films: Review of materials, properties, and applications

Cited by 1,620 publications

References 417 publications

Monodomain strained ferroelectricPbTiO3thin films: Phase transition and critical thickness study

Monodomain strained ferroelectricPbTiO3thin films: Phase transition and critical thickness study

Substrate Clamping Effects on Irreversible Domain Wall Dynamics in Lead Zirconate Titanate Thin Films

Thin fim barium strontium titanate capacitors for tunable RF frond-end applications

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