1/f noise in advanced CMOS transistors

Nemirovsky, Y.; Corcos, Dan; Brouk, Igor; Nemirovsky, Amikam; Chaudhry, S.

doi:10.1109/mim.2011.5704805

Cited by 35 publications

(17 citation statements)

References 28 publications

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“…It is not easy to determine the spatial distribution of traps with a given energy in the oxide [80]. In order to give a simple example, we consider that the traps are uniformly distributed between depths r 1 and r 2 in the oxide corresponding to the capture time constants τ c1 and τ c2 .…”

Section: Electronic Noisementioning

confidence: 99%

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Ultra Low Noise CMOS Image Sensors

Boukhayma

2018

Springer Theses

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Section: Electronic Noisementioning

confidence: 99%

“…The ITRS roadmaps expect the oxide trap density to decrease with the technology downscale [80]. Fig.…”

Section: / F and Thermal Noisementioning

confidence: 99%

Ultra Low Noise CMOS Image Sensors

Boukhayma

2018

Springer Theses

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“…It is reasonable to expect the 1/ f noise from the two smaller transistors to be nearly identical due to their similar area-0.96 and 0.72 μm 2 for the BC and Zero V t transistors, respectively-as the 1/ f noise power density is inversely proportional to the device area [12], [13]. The three transistors types have different W/L ratios, and so only a comparison of a normalized noise figure of merit is possible.…”

Section: Gain Bandwidth and Noisementioning

confidence: 99%

Performance of Deep-Depletion Buried-Channel $n$-MOSFETs for CMOS Image Sensors

Stefanov

Zhang

Damerell

et al. 2013

IEEE Trans. Electron Devices

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Buried-channel (BC) MOSFETs are known to have better noise performance than their surface-channel (SC) counterparts when used as a source follower in modern chargecoupled devices (CCDs). CMOS image sensors are finding increasing applications and compete with CCDs in highperformance imaging, but BC transistors are rarely used in CMOS. As a part of the development of charge storage using CCDs in CMOS, we designed and manufactured deep-depletion BC n-type MOSFETs in 0.18-µm CMOS image sensor process. The BC transistors are designed in a way similar to the source followers in a typical BC CCD, and feature deep n-channel implant and threshold voltage exceeding −2.5 V. In this paper, we report the results from their characterization and compare them with normal enhancement mode and "zero-threshold" SC devices. In addition to the detailed current-voltage and noise measurements, 2-D semiconductor device simulation results are presented to illustrate and understand the different conditions affecting the channel conduction and the noise performance of the BC transistors. We show that under optimal bias conditions the noise performance of the BC transistors can be superior despite their lower gain as in-pixel source followers.Index Terms-Buried-channel (BC) MOSFET, CMOS image sensors, semiconductor device noise.

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“…It is reasonable to expect the 1/f noise from the two smaller transistors to be nearly identical due to their similar area -0.96 µm 2 and 0.72 µm 2 for the BC and Zero Vt transistors, respectively, as the 1/f noise power density is inversely proportional to the device area 12,13 . The three transistors types have different W/L ratio and an exact comparison between them is not attempted here.…”

Section: Input-referred Noisementioning

confidence: 99%

Performance of buried channeln-type MOSFETs in 0.18-μm CMOS image sensor process

et al. 2013

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Buried channel (BC) MOSFETs are known to have better noise performance than surface channel (SC) MOSFETs when used as source followers in modern Charge Coupled Devices (CCD). CMOS image sensors find increasing range of applications and compete with CCDs in high performance imaging, however BC transistors are rarely used in CMOS. As a part of the development of charge storage using BC CCDs in CMOS, we designed and manufactured deep depletion BC n-type MOSFETs in 0.18 µm CMOS image sensor process. The transistors are designed in a way similar to the source followers in a typical BC CCD. In this paper we report the results from their characterization and compare with enhancement mode and "zero-threshold" SC devices. In addition to the detailed current-voltage and noise measurements, semiconductor device simulation results are presented to illustrate and understand the different conditions affecting the channel conduction and the noise performance of the BC transistors at low operating voltages. We show that the biasing of the BC transistors has to be carefully adjusted for optimal operation, and that their noise performance at the right operating conditions can be superior to SC devices, despite their lower gain as in-pixel source followers.

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1/f noise in advanced CMOS transistors

Cited by 35 publications

References 28 publications

Ultra Low Noise CMOS Image Sensors

Ultra Low Noise CMOS Image Sensors

Performance of Deep-Depletion Buried-Channel $n$-MOSFETs for CMOS Image Sensors

Performance of buried channeln-type MOSFETs in 0.18-μm CMOS image sensor process

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