1  GHz InP on-chip monolithic extended cavity colliding-pulse mode-locked laser

Guzmán, Robinson; Gordón, Carlos; Orbe, Luis; Carpintero, Guillermo

doi:10.1364/ol.42.002318

Cited by 18 publications

(14 citation statements)

References 10 publications

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“…They find a multitude of applications in optical data communication 3,4 , metrology 5,6 , medical imaging 7 and optical clocking 8 . Monolithically integrated semiconductor based designs have the advantages of straight-forward growth and processing while keeping a small footprint, which makes them favorable for future photonic integration 9 . However, spontaneous emission noise and the absence of an external reference clock in such devices leads to relatively pronounced timing and amplitude jitter 10–13 , which are limiting factors for applications.…”

Section: Introductionmentioning

confidence: 99%

Ultra-Short Pulse Generation in a Three Section Tapered Passively Mode-Locked Quantum-Dot Semiconductor Laser

Meinecke

Drzewietzki

Weber

et al. 2019

Sci Rep

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We experimentally and theoretically investigate the pulsed emission dynamics of a three section tapered semiconductor quantum dot laser. The laser output is characterized in terms of peak power, pulse width, timing jitter and amplitude stability and a range of outstanding pulse performance is found. A cascade of dynamic operating regimes is identified and comprehensively investigated. We propose a microscopically motivated traveling-wave model, which optimizes the computation time and naturally allows insights into the internal carrier dynamics. The model excellently reproduces the measured results and is further used to study the pulse-generation mechanism as well as the influence of the geometric design on the pulsed emission. We identify a pulse shortening mechanism responsible for the device performance, that is unique to the device geometry and configuration. The results may serve as future guidelines for the design of monolithic high-power passively mode-locked quantum dot semiconductor lasers.

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Section: Introductionmentioning

confidence: 99%

Ultra-Short Pulse Generation in a Three Section Tapered Passively Mode-Locked Quantum-Dot Semiconductor Laser

Meinecke

Drzewietzki

Weber

et al. 2019

Sci Rep

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“…In addition, more complex detection schemes are possible to measure correlation functions 3 . Finally, the advantage of low optical powers means a fully integrated THz system on silicon 36 with lasers 37–39 , frequency combs 40 and photodetection 41 is possible.…”

Section: Discussionmentioning

confidence: 99%

Compact and ultra-efficient broadband plasmonic terahertz field detector

et al. 2019

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Terahertz sources and detectors have enabled numerous new applications from medical to communications. Yet, most efficient terahertz detection schemes rely on complex free-space optics and typically require high-power lasers as local oscillators. Here, we demonstrate a fiber-coupled, monolithic plasmonic terahertz field detector on a silicon-photonics platform featuring a detection bandwidth of 2.5 THz with a 65 dB dynamical range. The terahertz wave is measured through its nonlinear mixing with an optical probe pulse with an average power of only 63 nW. The high efficiency of the scheme relies on the extreme confinement of the terahertz field to a small volume of 10−8(λTHz/2)3. Additionally, on-chip guided plasmonic probe beams sample the terahertz signal efficiently in this volume. The approach results in an extremely short interaction length of only 5 μm, which eliminates the need for phase matching and shows the highest conversion efficiency per unit length up to date.

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“…Using these on-chip broadband reflectors several lasers with advanced linear cavities and hybrid cavities have been realized. Using a colliding pulse MIR linear cavity, the lowest repetition rate InP passively MLL was realized with a repetition rate of 1 GHz [15]. A more complex linear cavity laser with a fundamental repetition rate of 25 GHz was demonstrated also using MIRs [16].…”

Section: Inp Extended Cavity Mode-locked Lasersmentioning

confidence: 99%

Recent Advances in the Photonic Integration of Mode-Locked Laser Diodes

Gasse

Uvin

Moskalenko

et al. 2019

IEEE Photon. Technol. Lett.

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Mode-locked fiber and solid state lasers have played an essential role in several scientific and technological developments. The integration of mode-locked lasers on chips could enable their use in a wide range of applications. The advancement of semiconductor mode-locked laser diodes has been going on for several decades, but has recently seen the development of novel devices based on generic InP and III-V-on-silicon photonic integration platforms. These photonic integration platforms enable the use of standardized components and low-loss waveguides within the laser cavity, allowing for the design of advanced extended cavities. In this manuscript we give a review of these novel devices and compare their performance.

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1 GHz InP on-chip monolithic extended cavity colliding-pulse mode-locked laser

Cited by 18 publications

References 10 publications

Ultra-Short Pulse Generation in a Three Section Tapered Passively Mode-Locked Quantum-Dot Semiconductor Laser

Ultra-Short Pulse Generation in a Three Section Tapered Passively Mode-Locked Quantum-Dot Semiconductor Laser

Compact and ultra-efficient broadband plasmonic terahertz field detector

Recent Advances in the Photonic Integration of Mode-Locked Laser Diodes

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