1 Hz / 15 Joules‐excimer‐laser development for flat panel display applications

Abstract

On the way toward the cost reduction of TFT‐LCD's manufacturing, Low Temperature Poly‐Silicon appears as one of the most promising technology. In the present paper, a new approach for laser annealing of amorphous silicon for AMLCD application is introduced. As a laser source, SOPRA developed a XeCl laser λ: 308 nm able to deliver up to 15 Joules per pulse onto the panel to be treated, at a repetition rate of 1 Hz. Moreover the long pulse duration of 200 ns is known to lead to a low cooling rate of the melted silicon, which promotes the growth of big grains and then improve the performances of the TFT's.

A five mask CMOS LTPS process with LDD and only one ion implantation step

“…On a 360 nm thick silicon oxide buffer layer on Corning 1737 glass, 40 nm of highly phosphorus doped microcrystalline silicon is deposited by PECVD at 13.56 MHz and 280 °C, followed by photolithographic definition of source/drain areas for the n-channel TFTs. Then a 50 nm layer of intrinsic amorphous silicon is deposited at 280 °C and crystallized by single area excimer laser crystallization (SAELC) after dehydrogenation at 450 °C in either high vacuum or in an N 2 atmosphere [5]. The process temperature of the dehydrogenation step was higher than that of any other process step.…”

28.4: A Silver gate a‐Si TFT with buffer layers for Large‐Area AMLCDs

“…Due to the increased demand of electronic displays [1], the market for AMLCDs, which use hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) arrays, is growing continuosly. During the last 10 years, the technology on active-matrix display has been significantly improved [2].…”