1 W Ku-band AlGaAs/GaAs power HBT's with 72% peak power-added efficiency

Shimura, Takaaki; Sakai, Masayuki; Izumi, Satoshi; Nakano, H.; Matsuoka, Hiroshi; Inoue, Akihisa; Udomoto, J.; Kosaki, K.; Kuragaki, T.; Takano, H.; Sonoda, T.; Takamiya, S.

doi:10.1109/16.469393

Cited by 22 publications

(3 citation statements)

References 12 publications

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“…In order to verify that the fabricated circuits operate in class-E mode, five-tone harmonic-balance analysis is used to simulate the circuits with Compact Software's Harmonica. 1 A Materka-Kacprzak model [16] for the Siemens CLY5 MESFET supplied by Compact Software is used for the simulations.…”

Section: Harmonic-balance Circuit Simulationsmentioning

confidence: 99%

“…By increasing the efficiency of an amplifier from 50% to 90%, the dissipated heat power is reduced by a factor of nine for the same output power. Currently, microwave amplifiers have demonstrated 72% power-added efficiency (PAE) with 1 W of output power at 12 GHz [1], 47% PAE with 0.5 W of output power at 20 GHz [2], and 29% PAE with 1 W of output power at 40 GHz [3]. The goal of this paper is to take advantage of rapid improvements in device technology, enabling design and analysis of very high-efficiency switched-mode power amplifiers.…”

Section: Introductionmentioning

confidence: 99%

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Switched-mode high-efficiency microwave power amplifiers in a free-space power-combiner array

Mader

Bryerton

Markovic

et al. 1998

IEEE Trans. Microwave Theory Techn.

130

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A design-oriented analysis of the microwave transmission-line class-E amplifier is presented. Experiments and harmonic-balance circuit simulations verify the theoretical equations which predict class-E-amplifier output power, maximum frequency of operation, and dc-RF conversion efficiency. Experimental results at 0.5, 1, 2, and 5 GHz are presented. At 0.5 GHz, 83% drain efficiency and 80% poweradded efficiency (PAE) are measured, with an output power of 0.55 W, using the Siemens CLY5 MESFET. These results are compared to a class-A and class-F power amplifier using the same device. At 5 GHz, 81% drain efficiency and 72% PAE are measured, with an output power of 0.61 W, using the Fujitsu FLK052WG MESFET. Finally, the 5-GHz class-E power amplifier is successfully integrated into an active-antenna array, demonstrating power combining of four elements with an 85% power-combining efficiency. At 5.05 GHz, the class-E power-amplifier antenna array delivers a total of 2.4 W of output power, with a dc-RF conversion efficiency of 74% and a PAE of 64%.

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Section: Harmonic-balance Circuit Simulationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Switched-mode high-efficiency microwave power amplifiers in a free-space power-combiner array

Mader

Bryerton

Markovic

et al. 1998

IEEE Trans. Microwave Theory Techn.

130

View full text Add to dashboard Cite

show abstract

“…GaN HEMT [63] GaN HEMT [62] GaAs FET [57] GaN HEMT GaN HEMT GaAs HBT [58] GaAs HFET [56] GaAs PHEMT [54] GaAs PHEMT [53] InP HBT [65] InP HBT [60] InP HBT [65] InP HBT [64] …”

Section: Unmatched Gan Hemt Devicesmentioning

confidence: 99%

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

Komiak

2015

IEEE Microwave

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AlGaInP/GaAs power HBTs design and fabrication

Cheng

Sun

Guanqun

et al. 2000

Microw. Opt. Technol. Lett.

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High‐power‐density and high‐efficiency AlGaInP/GaAs power HBTs have been successfully designed and fabricated by using 14 double‐finger emitters in parallel and related input and output matched circuits. The device material structure and layout design are discussed and optimized in detail. An output power of 1.07 W (power density of 2 mW/μm2) with a power‐added efficiency of 64% at 2 GHz has been achieved. ©2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 24: 332–334, 2000.

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1 W Ku-band AlGaAs/GaAs power HBT's with 72% peak power-added efficiency

Cited by 22 publications

References 12 publications

Switched-mode high-efficiency microwave power amplifiers in a free-space power-combiner array

Switched-mode high-efficiency microwave power amplifiers in a free-space power-combiner array

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

AlGaInP/GaAs power HBTs design and fabrication

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