100-kV high-resolution e-beam lithography system: JBX-9300FS

Takemura, Hitoshi; Ohki, H.; Isobe, M.

doi:10.1117/12.476925

Cited by 7 publications

(2 citation statements)

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“…One of the principle obstacles that must be overcome is reaching an economically viable throughput. Electron-beam lithography, for example, can generate sub-10 nm features, − over large areas, with good placement and overlay, but because of its relatively low throughput, it is limited commercially to the production of masks for use in photo- and nanoimprint lithography and device development, , and noncommercially to the production of nanostructures for research and defense purposes. The prospects for increasing the throughput of electron-beam systems are severely limited because of the fundamental physics of space-charge effectsthe repulsion between neighboring electrons in a single electron column leads to a loss of resolution or blurring of the beam as the beam current increases. − This limits the maximum beam current, and hence the throughput, that can be attained at a given resolution.…”

Section: Other Top-down Techniquesmentioning

confidence: 99%

Nanomanufacturing: A Perspective

2016

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Nanomanufacturing, the commercially-scalable and economically-sustainable mass production of nanoscale materials and devices, represents the tangible outcome of the nanotechnology revolution. In contrast to those used in nanofabrication for research purposes, nanomanufacturing processes must satisfy the additional constraints of cost, throughput, and time to market. Taking silicon integrated circuit manufacturing as a baseline, we consider the factors involved in matching processes with products, examining the characteristics and potential of top-down and bottom-up processes, and their combination. We also discuss how a careful assessment of the way in which function can be made to follow form can enable high-volume manufacturing of nanoscale structures with the desired useful, and exciting, properties.

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Section: Other Top-down Techniquesmentioning

confidence: 99%

Nanomanufacturing: A Perspective

2016

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“…Figure 2 shows an example of a multistage gun reported by JEOL in 2002 (100 kV). 5) The distance between the emitter and the anode has inevitably become long.…”

Section: Introductionmentioning

confidence: 99%

130 kV High-Resolution Electron Beam Lithography System for Sub-10-nm Nanofabrication

Okino¹,

Kuba²,

Shibata³

et al. 2013

Jpn. J. Appl. Phys.

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An electron beam lithography (EBL) system, CABL-UH, with a 130 kV high acceleration voltage has been developed that succeeded in minimizing beam size by minimizing Coulomb blur. This system has a short single-stage electron beam (EB) gun with an alignment function of two extractor centers to minimize Coulomb blur. This gun has also succeeded in thoroughly avoiding microdischarges. By adopting this EB gun and many other techniques, high resolution and long-term high stability have been achieved and an extremely fine pattern (4 nm line) has been delineated.

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Fullerene Nanocomposite Resists for Nanolithography

Ishii

Shigehara

2009

Hybrid Nanocomposites for Nanotechnology

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100-kV high-resolution e-beam lithography system: JBX-9300FS

Cited by 7 publications

References 0 publications

Nanomanufacturing: A Perspective

Nanomanufacturing: A Perspective

130 kV High-Resolution Electron Beam Lithography System for Sub-10-nm Nanofabrication

Fullerene Nanocomposite Resists for Nanolithography

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