2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 2014
DOI: 10.1109/csics.2014.6978522
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12.5 THz Fco GeTe Inline Phase-Change Switch Technology for Reconfigurable RF and Switching Applications

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Cited by 48 publications
(28 citation statements)
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“…If DW is to impact RF circuits, then switches will need to be developed, such as MEMS or phase change materials that can act as reconfigurable electronics for phased array applications [125,126]. Moreover, some new works are coming out on printed magnetic materials that could be viable for use as inductors or circulators that will enable further miniaturization of printed microelectronics since these have been difficult to fabricate with traditional thin film growth techniques with high permeability (μ) over high frequencies [127].…”
Section: International Journal Of Antennas and Propagationmentioning
confidence: 99%
“…If DW is to impact RF circuits, then switches will need to be developed, such as MEMS or phase change materials that can act as reconfigurable electronics for phased array applications [125,126]. Moreover, some new works are coming out on printed magnetic materials that could be viable for use as inductors or circulators that will enable further miniaturization of printed microelectronics since these have been difficult to fabricate with traditional thin film growth techniques with high permeability (μ) over high frequencies [127].…”
Section: International Journal Of Antennas and Propagationmentioning
confidence: 99%
“…Improvements need to be made in future work to increase switch reliability. Similar phase-change RF switches made in nonacademic settings have been reported to survive switching cycles as high as 10,000 cycles or more [28].…”
Section: Reliability Measurements Of Gete Switchesmentioning
confidence: 65%
“…Very recently, phase change materials (PCM), as GeTe chalcogenide alloy have been evaluated to develop RF switches since they presents a high resistance in the amorphous state and low resistance in the crystalline state [9] [10]. Our paper presents the integration of Ge2Sb2Te5 (GST) phase change material for the realization of RF/microwave switches.…”
Section: Introductionmentioning
confidence: 98%