12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate

Reliability Investigation of GaN HEMTs for MMICs Applications

“…In this paper, the authors would like to present an experimental evaluation of RF degradation carried out on several devices with either epi-structure variation and/or different field-plate structures introduced in order to both improve device performances and relax the electric field which builds up within the device active region [4,5].…”

Field Plate Devices for RF Power Applications

“…One of these structures is the so called field plate structure. This structure has been successfully implemented in RF GaAs-and GaN-based devices (Asano et al, 1998;Ando et al, 2003;Chini et al, 2004;Chini et al, 2008;Wu et al 2006) boosting device power performance by 2-4 times compared to conventional ones. The origin of this improvement has been associated by many authors to at least two reasons.…”

“…Increasing the device breakdown voltage means that the device can operate at higher voltages and thus, keeping constant the device current, higher output power levels. The second one is instead related to a reduction of a parasitic effect which is called DC-to-RF dispersion or drain current-collapse (Asano et al, 1998, Ando et al,2003Chini et al, 2004;Chini et al, 2008). When the device is affected by this phenomenon, drain current levels reached during RF operation are lower than those recorded during DC measurements.…”

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Grating Field Plates

“…Breakdown voltage enhancement in HEMTs and other field effect devices, using field plates (FPs) is a well known method [1][2][3]. In HEMTs the FPs distribute the electric field in the channel more equally and by that improve the device performance.…”