120 Watt, 2 GHz, Si LDMOS RF power transistor for PCS base station applications

Wood, A.K.; Dragon, C.; Burger, W.

doi:10.1109/mwsym.1998.705089

Cited by 37 publications

(4 citation statements)

References 3 publications

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“…Most recently, thin-film SOI lateral double-diffused MOSFETs (LDMOSFETs) have been explored for use in radio frequency power amplifiers (RF PAs). The RF PA is a critical component of all wireless systems, and bulk silicon LDMOSFETs are widely used in both cellular handsets [3] and in cellular base-stations [4]. Thin-film SOI LDMOSFETs have received particular attention for highly integrated wireless system-on-a-chip (SOC) applications.…”

Section: Ilicon-on-insulator (Soi) Mos Technology Hasmentioning

confidence: 99%

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Fiorenza

Alamo

2002

IEEE Trans. Electron Devices

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Abstract-We have simultaneously fabricated RF power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current-voltage ( -), capacitance-voltage ( -), -parameter, and 1.9-GHz load-pull characteristics and explains differences between them. The SOI LDMOSFET performance is shown to be largely similar to the performance of an equivalent bulk silicon LDMOSFET, but there are important differences. The SOI LDMOSFET has moderately lower on-state breakdown voltage due to increased body resistance. It also has significantly improved power-added efficiency due to reduced parasitic pad losses.Index Terms-Power MOSFET, silicon-on-insulator (SOI) technology.

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Section: Ilicon-on-insulator (Soi) Mos Technology Hasmentioning

confidence: 99%

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Fiorenza

Alamo

2002

IEEE Trans. Electron Devices

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“…4 of this textbook. Furthermore, higher operating frequencies and more sophisticated modulation schemes have been realized due to the high gain at better linearity of these unipolar RF transistors [13,14]. This disruptive technology paved the way for today's third and fourth generation RF power amplifiers in mobile communication base stations.…”

Section: Impact On Information Technologiesmentioning

confidence: 99%

Demand for Power Electronic Systems and Radio-Frequency Applications

Erlbacher

2014

Power Systems

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This chapter deals with applications for power electronics using integrated circuits, providing intuitive access to lateral power transistors employed therein. For this purpose so-called smart-power ICs combining logic operation, memory and power electronic circuitry are presently employed. Additionally, integrated lateral power transistors are also the driving force in multi-stage RF power amplifiers (monolithic microwave integrated circuits) for base stations with a clear trend towards further incorporation of logic functionality and the implementation in the power amplifiers of mobile devices.An overview of power electronic and power amplifier markets provides a basic understanding for the applications driven by these technologies and the implications involved in rolling out new developments. In particular, the impact of power electronics on energy conversion and the impact of power amplifiers on information technologies are presented. Power electronic and RF amplifier applications having a high impact on recent developments using integrated circuits are briefly reviewed. Examples of power electronic applications include motor control and drive inverters for window lifts in automobiles and switch-mode power supplies in battery chargers. Integrated circuits for radio-frequency (RF) applications are readily found in mobile communication base stations and in wireless local area network (WLAN) communication equipment.Subsequently, the requirements of these applications regarding their commercial use will be summarized. This overview includes economic aspects like energy efficiency, reliability as well as costs of fabrication and operation. Moreover, technologically relevant aspects regarding power density, ruggedness and switching frequency will be elaborated upon. Semiconductors in Integrated Power Electronics and Radio Frequency AmplifiersOne of the key enabling technologies for the success of monolithic integrated power electronic systems and RF applications has been the lateral double-diffused metaloxide-semiconductor (LDMOS) field-effect transistor in silicon technology which

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“…Practical laterally diffused MOS (LDMOS) devices employ a p sinker technology [23] to connect the source to the mounting flange so that the toxic BeO insulator is not needed. The traditional ceramic package can then be replaced with a low-cost plastic package.…”

Section: A Rf-power Mosfetsmentioning

confidence: 99%

HF, VHF, and UHF systems and technology

Raab

Caverly

Campbell³

et al. 2002

IEEE Trans. Microwave Theory Techn.

286

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A wide variety of unique systems and components inhabits the HF, VHF, and UHF bands. Many communication systems (ionospheric, meteor-burst, and troposcatter) provide beyond-line-of-sight coverage and operate independently of external infrastructure. Broadcasting and over-the-horizon radar also operate in these bands. Magnetic-resonance imaging uses HF/VHF signals to see the interior of a human body, and RF heating is used in a variety of medical and industrial applications. Receivers typically employ a mix of analog and digital-signal-processing techniques. Systems for these frequencies make use of RF-power MOSFETs, p-i-n diodes, and ferrite-loaded transmission-line transformers.

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120 Watt, 2 GHz, Si LDMOS RF power transistor for PCS base station applications

Cited by 37 publications

References 3 publications

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

Demand for Power Electronic Systems and Radio-Frequency Applications

HF, VHF, and UHF systems and technology

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