1200 V-trench-IGBT study with square short circuit SOA

Laska, T.; Pfirsch, F.; Hirler, F.; Niedermeyr, J.; Schäffer, C.; Schmidt, Thomas Mikael

doi:10.1109/ispsd.1998.702738

Cited by 37 publications

(10 citation statements)

References 8 publications

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“…In 1979 and 1980, there were some more publications [6]- [13] related to the invention of IGBT with different design concepts. Generally, there are few main categories of discrete IGBTs [14], some examples of which are DMOS IGBT [15][16], trench IGBT [17]- [20], soft punch through IGBT [21], injection enhanced insulated gate bipolar transistor [22], [23], carrier stored gate bipolar transistor [24], high-conductivity IGBT [25] and super junction bipolar transistor [26] [27]. In contrast to discrete IGBTs, the integrated IGBT has complementary metal-oxide-semiconductor (CMOS) compatibility and hence is the…”

Section: Literature Review Of Techniques Used In Ligbtmentioning

confidence: 99%

A Review of techniques used in Lateral Insulated Gate Bipolar Transistor (LIGBT)

Tee¹

2012

IOSRJEEE

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Section: Literature Review Of Techniques Used In Ligbtmentioning

confidence: 99%

A Review of techniques used in Lateral Insulated Gate Bipolar Transistor (LIGBT)

Tee¹

2012

IOSRJEEE

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“…A promising concept for an integration of protection functions is therefore to utilize the Amplifying Gate (AG) structure of the thyristor in such a way that in failure case a sufficiently large internal trigger current is generated turning on the device by means of the AG [1,2].…”

Section: B 8-kv Light-triggered Thyristor With Integratedprotection mentioning

confidence: 99%

“…Central part ofthe thyristor (BOD & four-stage AG structure) and part of the main cathode area (from Ref [1,2]…”

mentioning

confidence: 99%

Power semiconductors state-of-art and development trends

Lorenz

2007

2007 7th Internatonal Conference on Power Electronics

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WEB1·1Abstract-System integration and high power density of monolithic and multi-chip designs are the driving force for the progress in power electronic systems. The whole system has to be considered and optimized to meet this target and to keep the overall ruggedness, sensitivity towards EMI and long term reliability, Silicon utilization system reliability and power units miniaturization are the key factors.Power semiconductors are primarily used to control the flow of energy between the energy source and the load, and to do so with great precision, with extremely fast control times and with low dissipated power.The drive towards rational use of energy, miniaturization of electrical systems and power management has given im petus to the revolutionary development of power semiconductors and power electronic systems over the last 20 years.In this paper new technologies, advanced devices concepts and future system aspect for industrial segments are discussed. In these fields of applications there are huge requirements towards system dynamic characteristic, overload capability, ruggedness behaviour and reliability.High operating tem peratures is required, in the industrial high blocking voltage capabilities are needed. I. HIGH-VOLTAGE THYRISTORS DEVELOPMENTHigh-power thyristors with direct light-triggering and integrated protection functions can be utilized advantageously for applications in which several thyristors are connected in series, because this enables a significant reduction in the number of components necessary for the construction of high-power thyristor converters. This in turn leads to greater reliability and lower fabrication costs. It applies in particular to High-Voltage DC (HVDC) transmission, Static Var Compensation (SVC), converters for medium voltage drives, and also to certain pulse power applications. B. 8-kV light-triggered thyristor with integratedprotection functionsThyristors in HVDC converter stations have to be protected against several failures that may appear under standard operation. There are three classical failure events thyristors must be protected against:-voltage pulses with a too high amplitude (overvoltage), -voltage pulses with a too high voltage ramp dVIdt, and 978-1-4244-1872-5/08/$25.00

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“…In the past few years, several companies have fabricated trench IGBT prototypes using di erent technologies and approaches (Chang and Baliga 1989, Kitagawa et al 1993, Harada et al 1994, Udrea et al 1997, Chan et al 1998, Laska et al 1998. In this section we review our work with Mitel Semiconductor (Udrea et al 1997, Chan et al 1998 which was concerned with the design of 1.2 kV punch-through trench IGBTs based on stripe and hexagonal cell structures.…”

Section: Design and Technologymentioning

confidence: 99%

Silicon MOS controlled bipolar power switching devices using trench technology

Trajković¹,

Udrea²,

Amaratunga³

et al. 1999

International Journal of Electronics

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The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 8 kV) applications. Such devices will be based on utilizing the advantages brought about by trench gate MOSFETs to control bipolar current¯ow. In this paper we give a review of development of trench gate IGBTs and we describe brie¯y new promising device structures based on trench technology which use PIN diode and thyristor type carrier distributions to reduce power losses within the device.

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1200 V-trench-IGBT study with square short circuit SOA

Cited by 37 publications

References 8 publications

A Review of techniques used in Lateral Insulated Gate Bipolar Transistor (LIGBT)

A Review of techniques used in Lateral Insulated Gate Bipolar Transistor (LIGBT)

Power semiconductors state-of-art and development trends

Silicon MOS controlled bipolar power switching devices using trench technology

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