Silicon MOS controlled bipolar power switching devices using trench technology

Trajković, T.; Udrea, F.; Amaratunga, G.A.J.; Milne, W. I.; Chan, S.S.M.; Waind, P.; Thomson, J.; Crees, D.E.

doi:10.1080/002072199132716

Cited by 13 publications

(1 citation statement)

References 23 publications

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“…Previous studiesdemonstrated a reduced voltage drop due to the hole current in the p-base region and an increased latch-up current density. [7][8][9][10] However, this LTIGBT with a p+ diverter was not considered as an effective device because the forward blocking voltage was reduced significantly and the n-drift layer corresponding to the punch-through region was also reduced.…”

Section: Introductionmentioning

confidence: 99%

A New Lateral Trench Electrode Insulated Gate Bipolar Transistor with p+ Diverter for Superior Electrical Characteristics

Sung¹,

Kang

Kim³

et al. 2003

Jpn. J. Appl. Phys.

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A new lateral trench electrode insulated gate bipolar transistor (LTEIGBT) with a p+ diverter was proposed and fabricated to improve the electrical characteristics of the conventional LTIGBT. The p+ diverter was placed between anode and cathode electrodes. Because the p+ diverter region of the proposed device was an enclosed trench oxide layer, the electric field centered on the trench oxide layer and the punch-through breakdown of the LTEIGBT with a p+ diverter was occurred at a high. Therefore, the p+ diverter of the proposed LTIGBT was not related to the breakdown voltage in contrast to that of the conventional LTIGBT. As a result of device simulation, the electrical characteristics of the proposed LTEIGBT including latching current density, breakdown voltage and switching speed were superior to those of the conventional LIGBTs. After simulation, we fabricated and analyzed the proposed LTEIGBT with a p+ diverter. The maximum currents of the proposed and conventional LTIGBTs were 90 mA and 70 mA, respectively. Therefore, the proposed LTEIGBT with a p+ diverter is an effective device for a smart power IC.

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Section: Introductionmentioning

confidence: 99%