“…[1][2][3][4] Among them, amorphous oxide thin-film transistor (TFT) has attracted attention recently due to its superior electrical mobility, lower power consumption, transparency, and large-area application. [5][6][7][8] Despite these advantages, residual issues needed to be solved have remained such as leakage current at zero gate-source bias, electrical, and photo reliability. 1,3,7 To overcome these issues, we have proposed several GIP schemes and successfully developed and produced large-area OLED display with oxide backplane.…”